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RC-322 Shao, Y., D. Ma, D. A. Antoniadis, L. Wei, and J. A. del Alamo, “Enhancement-mode BEOL In₂O₃ FETs with Record Logic Performance: Experiments and Compact Modeling”. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, Dec. 6-10, 2025. (paper) (slides)

RC-321 Shao, Y., M. Kim, J. C.-C. Huang, D. A. Antoniadis, and J. A. del Alamo, “Single-domain Switching Dynamics in BEOL Nanoscale Ferroelectric Field-effect Transistors.” Invited paper, IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, Dec. 6-10, 2025 (paper) (slides)

RC-320 Shen, D., P. M. Solomon, G. Cohen, J. Rozen and J. A. del Alamo, “In-Situ Hydrogenated CMOS-Compatible WO3/Pd/PSG/WO3 ECRAM Discrete Polarization Switching in Nanoscale BEOL FE-FETs.” 23rd IEEE Non-Volatile Memory Technology Symposium (NVMTS), Atlanta, GA, Sept. 29 to Oct. 1, 2025.

RC-319 Bitton, S. and J. A. del Alamo, “Protonic ECRAM: Insights from 2D Simulations.” 23rd IEEE Non-Volatile Memory Technology Symposium (NVMTS), Atlanta, GA, Sept. 29 to Oct. 1, 2025.

RC-318 Shao, Y., D. A. Antoniadis and J. A. del Alamo, “Discrete Polarization Switching in Nanoscale BEOL FE-FETs.” Invited paper to 23rd IEEE Non-Volatile Memory Technology Symposium (NVMTS), Atlanta, GA, Sept. 29 to Oct. 1, 2025.

RC-316 Shao, Y., M. Kim, J. C.-C. Huang, T. E. Espedal, D. A. Antoniadis and J. A. del Alamo, “Accumulation and Relaxation of Single-Domain Polarization in Nanoscale Ferroelectric-Gate Metal-Oxide Transistors.” 83nd IEEE Device Research Conference (DRC 2025), Durham, NC, June 22-25, 2025.

RC-315 Espedal, T. E., Y. Shao, J. C.-C. Huang, E. R. Borujeny, D. A. Antoniadis and J. A. del Alamo, “Frequency-Dependent Wake-Up in Ferroelectric Hf_0.5Zr_0.5O₂ Devices.” 83nd IEEE Device Research Conference (DRC 2025), Durham, NC, June 22-25, 2025.

RJ-230 Shao, Y., E. R. Borujeny, J. Navarro, J. C.-C. Huang, T. E. Espedal, D.
A. Antoniadis and J. A. del Alamo, “Domain-level ferroelectric polarization switching in nanoscale oxide-channel ferroelectric field-effect transistors.” NanoLetters 25, 3173-3179 (2025). (DOI)

RJ-229 Huang, M., L. Xu, J. A. del Alamo, J. Li and B. Yildiz, “Nonlinear ion dynamics enable spike timing de-pendent plasticity of electrochemical ionic synapses.” Advanced Materials, 2418484, 2025. (DOI)

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RC-314 Shao, Y., J. C.-C. Huang, E. R. Borujeny, T. E. Espedal, D. A. Antoniadis and J. A. del Alamo, “Highly-Scaled BEOL E-mode Transistor and Discrete-Domain Ferroelectric Memory Platform Enabled by PEALD In2O3.” To be presented at 2024 IEEE International Electron Devices Meeting (IEDM 2024), San Francisco, CA, December 7-11, 2024.

RJ-228 Shao, Y., M. Pala, H. Tang, B. Wang, J. Li, D. Esseni and J. A. del Alamo, “Realizing the potential of ultra-scaled tunneling electronics through extreme quantum confinement.” Nature Electronics, 04 November 2024. DOI: 10.1038/s41928-024-01279-w. (Public open link)

RJ-227 Kim, T., J. A. del Alamo, and D. Antoniadis, “On the imprint mechanism of thin-film Hf0.5Zr0.5O2 ferroelectrics.” IEEE Transactions on Electron Devices, Vol. 71, No. 11, pp. 6620-6626, November 2024. DOI: 10.1109/TED.2024.3439497. (DOI)

RC-313 Shao, Y., E. R. Borujeny, J. Navarro, J. C.-C. Huang, T. E. Espedal, D.
A. Antoniadis and J. A. del Alamo, “Discrete Domain Switching in Scaled Amorphous Metal-Oxide Channel Ferroelectric FETs.” TECHCON 2024, Austin, TX, September 8-10, 2024.

RC-312 Espedal, T. E., Y. Shao, E. R. Borujeny, and J. A. del Alamo, “Characterization of ferroelectric endurance in Hf0.5Zr0.5O2 deposited by plasma-enhanced ALD under different process conditions.” TECHCON 2024, Austin, TX, September 8-10, 2024.

RC-311 Buzzell, D., F. Kurnia, H. Chu, L. Kong, J. A. del Alamo and J. L. M. Rupp, “Tailoring Li4Ti5O12 thin-film carrier kinetics through solid-solution doping for battery and memristor applications.” To be presented at 24th International Conference on Solid State Ionics (SSI24), London, UK, July 15-19, 2024.

RC-310 Shao, Y., E. R. Borujeny, J. Navarro, J. C.-C. Huang, T. E. Espedal, D. A. Antoniadis and J. A. del Alamo, “Discrete Domain Switching in Scaled Oxide-Channel Ferroelectric FETs.” 82nd IEEE Device Research Conference (DRC 2024), College Park, MD, June 23-26, 2024. (slides)

RJ-226 Roh, H., D.-H. Kim, Y. Cho, Y.-M Jo, J. A. del Alamo, H. J. Kulik, M. Dinca, A. Gumyusenge, “Robust Chemiresistive Behavior in Conductive Polymer/MOF Composites.” Advanced Materials 2312382 (2024). (DOI)

RJ-225 Schwacke, M., P. Zguns, J. A. del Alamo, J. Li, and B. Yildiz, “Electrochemical Ionic Synapses with Mg2+ as the Working Ion.” Advanced Electronic Materials 2300577, 2024. (DOI)

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RC-309 del Alamo, J. A., “Analog AI Accelerators.” Invited Talk at 37th Conference on Neural Information Processing Systems (NeurIPS 2023), Machine Learning with New Compute Paradigms Workshop, New Orleans, LA, December 10-16, 2023. Unpublished. (Video)

RC-308 Kim, T., E. R. Borujeny, I. Sardinero-Meiras, J. Grajal, K. C. Cadien, D. A. Antoniadis and J. A. del Alamo, “AC Impedance Characteristics of Ferroelectric Hf0.5Zr0.5O2: from 1 kHz to 10 GHz.” 2023 IEEE International Electron Devices Meeting (IEDM 2023), San Francisco, CA, December 9-13, 2023, paper 11-5. (DOI) (Slides)

RC-307 Onen, M., J. Li, B. Yildiz and J. A. del Alamo, “Phosphosilicate Glass-Based Nanosecond Protonic Programmable Resistors for Analog Deep Learning.” CMOS-Compatible Nanosecond Protonic Programmable Resistors for Analog Deep Learning.” Invited Talk at 7th IEEE Electron Devices Technology Manufacturing Conference (EDTM 2023), Seoul, Korea, March 7-10, 2023. (DOI) (Slides)

RJ-224 Song, M.-K., J.-H. Kang, X. Zhang, W. Ji, A. Ascoli, I. Messaris, A. S. Demirkol, B. Dong, S. Aggarwal, W. Wan, S.-M. Hong, S. G. Cardwell, I. Boybat, J.-s. Seo, J.-S. Lee, M. Lanza, H. Yeon, M. Onen, J. Li, B. Yildiz, J. A. del Alamo, S. Kim, S. Choi, G. Milano, C. Ricciardi, L. Alff, Y. Chai, Z. Wang, H. Bhaskaran, M. C. Hersam, D. Strukov, H.-S. P. Wong, I. Valov, B. Gao, H. Wu, R. Tetzlaff, A. Sebastian, W. Lu, L. Chua, J. J. Yang, and J. Kim, “Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems.” Review Article in ACS Nano, 17, 11994-12039, 2023. (DOI)

RJ-223 Huang, M., M. Schwacke, M. Onen, J. A. del Alamo, J. Li, and B. Yildiz, “Electrochemical Ionic Synapses: Progress and Perspectives.” Advanced Materials, 2205169, 2023. (DOI)

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RC-306 Onen, M., J. Li, B. Yildiz and J. A. del Alamo, “CMOS-Compatible Nanosecond Protonic Programmable Resistors for Analog Deep Learning.” 2022 Non-Volatile Memory Technology Symposium (NVMTS 2022), Stanford, CA, December 7-9, 2022. (Slides)

RC-305 Onen, M., J. Li, B. Yildiz and J. A. del Alamo, “Dynamics of PSG-Based Nanosecond Protonic Programmable Resistors for Analog Deep Learning.” 2022 IEEE International Electron Devices Meeting (IEDM 2022), San Francisco, CA, December 3-7, 2022, pp. 38-41. (DOI) (Slides)

RC-304 Yildiz, B., M. Huang, M. Onen, M. Schwacke, X. Yao, M. Fee, J. Li, J. del Alamo, “Electrochemical Ionic Synapses for Analog Deep Learning and Beyond.” Keynote talk at 5th International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2022), Cambridge, MA, November 30-December 2, 2022. (Slides)

RC-303 del Alamo, J. A., M. Onen, J. Li, and B. Yildiz, “PSG-Based Nanosecond Protonic Programmable Resistors for Analog Deep Learning.” Keynote talk at 5th International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2022), Cambridge, MA, November 30-December 2, 2022. (Slides)

RJ-222 MIT Microelectronics Group, “Reasserting US Leadership in Microelectronics: The Role of Universities.” The Bridge, Vol. 52, Issue 4, Winter 2022. (Link)

RJ-221 Onen, M., N. Emond, B. Wang, D. Zhang, F. Ross, J. Li, B. Yildiz and J. A. del Alamo, “Nanosecond Protonic Programmable Resistors under Extreme Electric Field.” Science, Vol. 377, pp. 539-543, 29 July 2022. (DOI)

RJ-220 Kim, T., J. A. del Alamo and D. A. Antoniadis, “Switching Dynamics in Metal-Ferroelectric HfZrO2-Metal Structures.” IEEE Transactions on Electron Devices, Vol. 69, No. 7, pp. 4016-4021, July 2022. (DOI)

RC-302 Onen, M., N. Emond. J. Li, B. Yildiz and J. A. del Alamo, “CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte.” 23rd International Conference on Solid-State Ionics (SSI 2022), Boston, MA, June 17-22, 2022. (Slides)

RC-301 Huang, M., M. Onen, J. A. del Alamo, J. Li and B. Yildiz, “An Equivalent Circuit Model of Electrochemical Artificial Synapses for Neuromorphic Computing.” 23rd International Conference on Solid-State Ionics (SSI 2022), Boston, MA, June 17-22, 2022.

RC-300 Schwacke, M., J. A. del Alamo, J. Li and B. Yildiz, “Electrochemical Artificial Synapses Based on Intercalation of Mg2+ Ions.” 23rd International Conference on Solid-State Ionics (SSI 2022), Boston, MA, June 17-22, 2022.

RJ-219 Vardi, A., M. Tordjman, R. Kalish and J. A. del Alamo, “WO3 passivation of access regions in Diamond MOSFETs.” IEEE Transactions on Electron Devices, Vol. 69, No. 6, pp. 3334-3340, June 2022. (DOI: 10.1109/TED.2022.316573.)

RJ-218 Shao, Y. and J. A. del Alamo, “Sub-10 nm Diameter Vertical Nanowire p-Type GaSb/InAsSb Tunnel FETs.” IEEE Electron Device Letters, Vol. 43, No. 6, pp. 846-849, June 2022. (DOI)

RC-299 Lee, E. S., J. Joh, D. S. Lee and J. A. del Alamo, “Gate-geometry dependence of dynamic Vt in p-GaN gate HEMTs.” 2022 International Symposium on Power Semiconductor Devices and ICs (ISPSD 2022), Vancouver, Canada, May 22-26, 2022, pp. 201-204. (DOI) (Slides)

RJ-217 Onen, M., T. Gokmen, T. K. Todorov, T. Nowicki, J. A. del Alamo, J. Rozen, W. Haensch and S. Kim, “Neural Network Training with Asymmetric Crosspoint Elements.” Frontiers in Artificial Intelligence, Vol. 5, Article 891624, 09 May 2022. (DOI)

RJ-216 Shao, Y., M. Pala, D. Esseni and J. A. del Alamo, “Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10 nm Diameter.” IEEE Transactions on Electron Devices, Vol. 69, No. 4, pp. 2188-2196, April 2022. (DOI)

RC-298 Lee, E. S., J. Joh, D. S. Lee and J. A. del Alamo, “Impact of Gate Offset on PBTI of p-GaN Gate HEMTs.” 2022 IEEE International Reliability Physics Symposium (IRPS 2022), Dallas, TX, March 27-31, 2022, pp. P21-1-P21-6. (DOI) (Slides)

RJ-215 Lee, E. S., J. Joh, D. S. Lee and J. A. del Alamo, “Gate-Geometry Dependence of Electrical Characteristics of p-GaN Gate HEMTs.” Applied Physics Letters, Vol. 120, 082104, 23 February 2022. (DOI)

RJ-214 Antoniadis, D., T. Kim and J. A. del Alamo, “Nucleation-Limited Switching Dynamics Model for Efficient Ferroelectrics Circuit Simulation.” IEEE Transactions on Electron Devices, Vol. 69, No. 1, pp. 395-399, January 2022. (DOI)

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RC-297 Shao, Y., M. G. Pala, D. Esseni, and J. A. del Alamo, “Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations.” 2021 IEEE International Electron Devices Meeting (IEDM 2021), San Francisco, CA, December 11-15, 2021, pp. 677-680. (DOI) (Slides)

RC-295 del Alamo, J. A., Invited Paper, “Nanoscale InGaAs Electronics: Lessons towards transistor innovation in new material systems.” 40th Electronic Materials Symposium (EMS-40). Online, October 11-13, 2021. (Abstract) (Slides)

RC-294 del Alamo, J. A., Invited Keynote, “Nanoscale InGaAs Electronics: Lessons towards transistor innovation in new material systems.” 32nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), October 4-8, 2021. (Abstract) (Slides)

RJ-213 Choi, D., A. Vardi, and J. A. del Alamo, “Analysis of Mo Sidewall Ohmic Contacts to InGaAs Fins.” IEEE Transactions on Electron Devices, Vol. 68, No. 10, pp. 4847-4853, Oct. 2021. (DOI)

RC-293 del Alamo, J. A., Invited Paper, “Microchip Manufacturing in the U.S. and the Drive to Reassert Leadership in Microelectronics.” 2nd USA/Mexico Energy Corridor Symposium. Online, September 23-24, 2021. (Slides)

RC-292 del Alamo, J. A., X. Cai, X. Zhao, A. Vardi, and J. Grajal, Invited Paper, “Nanoscale InGaAs FinFETs: Band-to-Band Tunneling and Ballistic Transport.” 51st European Solid-State Device Research Conference (ESSDERC 2021), Online, September 2021. (DOI) (Slides) (Video)

RJ-212 Onen, M., N. Emond, J. Li, B. Yildiz, and J. A. del Alamo, ” CMOS-compatible Protonic Programmable Resistor based on Phosphosilicate Glass Electrolyte for Analog Deep Learning.” NanoLetters, Vol. 21, pp. 6111-6116, 2021. (DOI)

RJ-211 Geis, M. W., J. O. Varghese, Alon Vardi, J. Kedzierski, J. Daulton, D. Calawa, M. A. Hollis, C. H. Wuorio, G. W. Turner, S. M. Warnock, T. Osadchy, J. Mallek, A. Melville, Jesus A. del Alamo and Beijia Zhang, “­­­­­Hydrogen and deuterium termination of diamond for low surface resistance and surface step control.” Diamond and Related Materials, Vol. 118, article 108518, July 2021. (DOI)

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RC-291 Kim, T., J. A. del Alamo and D. A. Antoniadis, “Dynamics of HfZrO2 Ferroelectric Structures: Experiments and Models.” 2020 IEEE International Electron Devices Meeting (IEDM 2020), Online, December 12-18, 2020, pp. 441-444. (DOI) (slides) (video)

RC-290 Cai, X., A. Vardi, J. Grajal and J. A. del Alamo, “Ballistic Mobility and Injection Velocity in Nanoscale InGaAs FinFETs.” 2020 IEEE International Electron Devices Meeting, Online, December 12-18, 2020, pp. 172-175. (DOI) (slides) (video)

RC-289 Emond, M. X. Yao, M. Onen, S. Ryu, J. A. del Alamo, Ju Li, and B. Yildiz, “Proton Intercalation in Solid-State Electrochemical Synapse for Energy-Efficient Neuromorphic Computing.” Materials Research Society Fall Meeting & Exhibit, Boston, MA, November 27-December 4, 2020. (abstract)

RJ-210 Vardi, A., M. Tordjman, R. Kalish and J. A. del Alamo, “Refractory W Ohmic Contacts to H-Terminated Diamond.” IEEE Transactions on Electron Devices, Vol. 67, No. 9, pp. 3516-3521, September 2020. (DOI)

RJ-209 Cai, X., A. Vardi, J. Grajal, and J. A. del Alamo, “A New Technique for Mobility Extraction in MOSFETs in the Presence of Prominent Gate Oxide Trapping: Application to InGaAs MOSFETs.” IEEE Transactions on Electron Devices, Vol. 67, No. 8, pp. 3075-3081, August 2020. (DOI)

RJ-208 208 Yao, X., K. Klyukin, W. Lu, M. Onen, S. Ryu, D. Kim, N. Emond, I. Waluyo, A. Hunt, J. A. del Alamo, J. Li, and B. Yildiz, “Protonic Solid-State Electrochemical Synapse for Physical Neural Networks.” Nature Communications, 11:3134, 2020. (DOI)

RC-288 del Alamo, J. A., “Nanoscale III-V Electronics.” Invited Keynote, 2020 SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2020), Online, August 24-26, 2020. (slides) (video)

RC-287 del Alamo, J. A., “Nanoscale III-V Electronics: InGaAs FinFETs and Nanowire MOSFETs.” Invited Keynote, Latin America Electron Devices Conference, San Jose, Costa Rica, February 25-28, 2020. (abstract) (slides)

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RC-286 Yao, X., W. Lu, N. Emond, J. A. del Alamo, J. Li, and B. Yildiz, “Proton-intercalation Based Analog Resistive Switching for Neuromorphic Computing.” Materials Research Society Fall Meeting & Exhibit, Boston, MA, December 1-6, 2019. (abstract)

RC-285 Tordjman, Y. Lee, A. Vardi, R. Kalish and J. A. del Alamo, “Diamond:H/Transition-Metal Oxides Transistors: from MOSFET to MESFET.” Materials Research Society Fall Meeting & Exhibit, Boston, MA, December 1-6, 2019. (abstract) (slides)

RJ-207 Rau, M., J. Lin, D. A. Antoniadis, J. A. del Alamo and M. Luisier, “Investigation of source starvation in record III-V quantum well MOSFETs.” IEEE Transactions on Electron Devices, Vol. 66, No. 11, pp. 4698-4705, November 2019. (DOI)

RJ-206 del Alamo, J. A. and E. S. Lee, “Stability and Reliability of Lateral GaN Power Field-Effect Transistors.” Invited Paper in Special Issue on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices of IEEE Transactions on Electron Devices, Vol. 66, No. 11, pp. 4578-4590, November 2019. (DOI)

RJ-205 Lu, W., Y. Lee, J. C. Gertsch, J. A. Murdzek, A. S. Cavanagh, L. Kong, J. A. del Alamo and S. M. George, “In situ Thermal Atomic Layer Etching for Sub-5 nm InGaAs Multi-gate MOSFETs.” Nano Letters, Vol. 19, pp. 5159-5166, 2019. (DOI)

RJ-204 Srimani, T., G. Hills, X. Zhao, D. Antoniadis, J. A. del Alamo and M. M. Shulaker, “Asymmetric gating for reducing leakage current in carbon nanotube field-effect transistors.” Applied Physics Letters, Vol. 115, 063107, 2019. (DOI)

RC-284 Li, K., E. X. Zhang, S. Bonaldo, A. L. Sternberg, J. A. Kozub, M. Reaz, L. D. Ryder, K. L. Ryder, H. Gong, S. M. Weiss, R. A. Weller, A. Vardi, J. A. del Alamo, R. A. Reed, D. M. Fleetwood and R. D. Schrimpf, “Pulsed Laser-Induced Single-Event Transients in InGaAs FinFETs with Sub-10-nm Fin Widths.” Radiation and its Effects on Components and Systems (RADECS), Montpellier, France, September 16-20, 2019. (DOI)

RJ-203 Vidal, N. J. M. Lopez-Villegas, J. A. del Alamo, “Analysis and Optimization of Multi-Winding Toroidal Inductors for use in Multilayered Technologies.” IEEE Access, Vol. 7, pp. 93537-93544, July 11, 2019. (DOI)

RC-283 Yao, X., W. Lu, N. Emond, J. A. del Alamo, J. Li and B. Yildiz “Proton-intercalation Based Analog Resistive Switching for Neuromorphic Computing.” 22nd International Conference on Solid State Ionics (SSI), PyeongChang, Korea, June 16-21, 2019. (abstract) (slides)

RC-282 Cai, X., A. Vardi, J. Grajal, and J. A. del Alamo, “Reassessing InGaAs for Logic: Mobility Extraction in sub-10 nm Fin-Width FinFETs.” IEEE VLSI Technology Symposium, Kyoto, Japan, June 9-14, 2019. (DOI) (slides)

RJ-202 Zhao, X., A. Vardi and J. A. del Alamo, “Fin-Width Scaling of Highly-Doped InGaAs Fins.” IEEE Transactions on Electron Devices, Vol. 66, No. 6, pp. 2563-2568, June 2019. DOI: 10.1109/TED.2019.2912618. (paper)

RJ-201 Zhao, X., A. Vardi and J. A. del Alamo, “Excess OFF-State Current in InGaAs FinFETs: Physics of the Parasitic Bipolar Effect.” IEEE Transactions on Electron Devices, Vol. 66, No. 5, pp. 2113-2118, May 2019. DOI: 10.1109/TED.2019.2903912. (DOI)

RJ-200 Kanhaiya, P. S., Y. Stein, W. Lu, J. A. del Alamo and M. M. Shulaker, “X3D: Heterogeneous Monolithic 3D Integration of “X” (Arbitrary) Nanowires: Silicon, III-V, and Carbon Nanotubes.” IEEE Transactions on Nanotechnology, Vol. 18, pp. 270-273, 2019. DOI: 10.1109/TNANO.2019.2902114. (DOI)

RC-281 Lee, E. S., L. Hurtado, J. Joh, S. Krishnan, S. Pendharkar, and J. A. del Alamo, “Time-Dependent Dielectric Breakdown under AC Stress in GaN MIS-HEMTs.” IEEE International Reliability Physics Symposium (IRPS), Monterrey, CA, March 31-April 4, 2019. (DOI)

RJ-199 Lin, J., X. Zhao, I. Manglano, D. A. Antoniadis and J. A. del Alamo, “A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs.” IEEE Transactions on Electron Devices, Vol. 66, No. 3, pp. 1208-1212, March 2019. DOI: 10.1109/TED.2019.2891751. (DOI)

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RC-280 Lu, W., Y. Lee, J. Murdzek, J. Gertsch, A. Vardi, L. Kong, S. M. George and J. A. del Alamo, “First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in-situ ALE-ALD.” IEEE International Electron Devices Meeting, San Francisco, CA, December 1-5, 2018, pp. 895-898. (paper) (slides)

RJ-198 El Kazzi, S., A. Alian, B. Hsu, P. Favia, C. Merckling, W. Lu, J. A. del Alamo, “Threading Dislocations Impact in Top-Down n+InAs/p+GaSb Nanowire Esaki Diodes Fabricated on Mismatched Substrates.” Journal of Applied Physics, Vol. 124, Issue 19, 195703, 19 November 2018. DOI: 10.1063/1.5049900. (paper)

RC-279 Tordjman, M., Z. Yin, Y. Lee, A. Vardi, R. Kalish and J. A. del Alamo, “Diamond:H/Transition Metal Oxides Transfer-Doping Efficiency and Transistors Performance.” Materials Research Society Fall Meeting & Exhibit, Boston, MA November 25-30, 2018. (paper) (slides)

RC-278 del Alamo, J. A., X. Zhao, W. Lu, A. Vardi and X. Cai, “Nanoscale III-V Electronics: InGaAs FinFETs and Vertical Nanowire MOSFETs.” Invited Plenary Talk at IEEE Nanotechnology Materials and Devices Conference (NMDC), Portland, OR, October 14-17, 2018. (slides)

RJ-197 Roh, I.P, S. H. Kim, D.-M. Geum, W. Lu, Y. H. Song, J. A. del Alamo and J. D. Song, “Enhanced hole mobility in strained In0.25Ga0.75Sb Quantum Well with High Quality Al0.95 Ga0.05As Buffer Layer. Applied Physics Letters, Vol. 113, 093501 (2018). DOI: 10.1063/1.5043509. (paper)

RJ-196 Yin, Z., M. Tordjman, Y. Lee, A. Vardi, R. Kalish, J. A. del Alamo, “Enhanced Transport in Transistor by Tuning Transition-Metal Oxide Electronic States Interfaced with Diamond.” Science Advances 4, eaau0480, 28 September 2018. DOI: 10.1126/sciadv.aau0480. (paper)

RJ-195 Zhao, X., C. Heidelberger, E. A. Fitzgerald, W. Lu, A. Vardi and J. A. del Alamo, “Sub-10 nm Diameter InGaAs Vertical Nanowire MOSFETs: Ni vs. Mo Contacts.” IEEE Transactions on Electron Devices, Vol. 65, No. 9, pp. 3762-3768, September 2018. DOI: 10.1109/TED.2018.2859202. (paper)

RJ-194 Zhao, X., W. Lu, A. Vardi and J. A. del Alamo, “Shrinking the vertical nanowire MOSFET.” Compound Semiconductor Magazine, Vol. 24, Issue 4, pp. 52-56, June 2018. (paper)

RC-276 Zhao, X., A. Vardi and J. A. del Alamo, “Modeling the Parasitic Bipolar Effect in InGaAs FinFETs.” Compound Semiconductor Week (CSW 2018), Cambridge, Massachusetts (U.S.), May 29-June 1, 2018.

RC-275 Lu, W. and J. A. del Alamo, “Digital Etch for InGaSb p-Channel FinFETs with 10 nm Fin Width.” Compound Semiconductor Week (CSW 2018), Cambridge, Massachusetts (U.S.), May 29-June 1, 2018. (slides)

RC-274 Vardi, A. and J. A. del Alamo, “Fin-Width Scaling of Highly-Doped InGaAs Fins.” Semiconductor Week (CSW 2018), Cambridge, Massachusetts (U.S.), May 29-June 1, 2018.

RC-273 Cai, X., J. Grajal and J. A. del Alamo, “Mobility extraction in thin-channel InGaAs MOSFETs.” Compound Semiconductor Week (CSW 2018), Cambridge, Massachusetts (U.S.), May 29-June 1, 2018.

RC-272 del Alamo, J. A., X. Cai, W. Lu, A. Vardi and X. Zhao, “III-V CMOS: Quo Vadis?” Invited Talk at Compound Semiconductor Week (CSW 2018), Cambridge, Massachusetts (U.S.), May 29-June 1, 2018. (slides)

RJ-193 Chou, P.-C., T. E. Hsieh, S. Cheng, J. A. del Alamo and E. Chang, “Comprehensive Dynamic On-Resistance Assessments in GaN-on-Si MIS-HEMTs for Power Switching Applications.” Semiconductor Science and Technology, Vol. 33, No.5, 055012, May 2018. DOI: 10.1088/1361-6641/aabb6a. (paper)

RJ-192 Yin, Z., M. Tordjman, A. Vardi, R. Kalish and J. A. del Alamo, “A Diamond:H/WO3 Metal-Oxide-Semiconductor Field-Effect Transistor.” IEEE Electron Device Letters, Vol. 39, No. 4, pp. 540-543, April 2018. DOI: 10.1109/LED.2018.2808463. (paper)

RJ-191 Zhao, X., A. Vardi and J. A. del Alamo, “Excess Off-State Current In InGaAs FinFETs.” IEEE Electron Device Letters, Vol. 39, No. 4, pp. 476-479, April 2018. DOI: 10.1109/LED.2018.2806559. (paper)

RC-271 del Alamo, J. A. and A. Guo, “Bias Stress Instability in GaN-based Field Effect Transistors.” Invited Talk at Material Research Society Spring Meeting & Exhibit, Phoenix, AZ, April 2-6, 2018. (slides)

RC-270 del Alamo, J. A., X. Cai, W. Lu, A. Vardi and X. Zhao, “III-V CMOS: Quo Vadis?” Invited Talk at Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2018), Granada, Spain, March 19-21, 2018. (slides)

RJ-190 El Kazzi, S., A. Alian, B. Hsu, A. S. Verhulst, A. Walke, P. Favia, B. Douhard, W. Lu, J. A. del Alamo, N. Collaert, and C. Merckling, “Careful Stoichiometry Monitoring and Doping Control During the Tunneling Interface Growth of an n+InAs(Si)/p+GaSb(Si) Esaki Diode.” Journal of Crystal Growth, Vol. 484, pp. 86-91, 15 February 2018. DOI: 10.1016/j.jcrysgro.2017.12.035. (paper)

RJ-189 Gong, H., K. Ni, A. E. X. Zhang, A. L. Sternberg, J. A. Kozub, K. L. Ryder, R. F. Keller, L. D. Ryder, S. M. Weiss, R. A. Weller, K. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, A. Vardi and J. A. del Alamo, “Scaling Effects on Single-Event Transients in InGaAs FinFETs.” IEEE Transactions on Nuclear Science, Vol. 65, No. 1, pp. 296-303, January 2018. DOI: 10.1109/TNS.2017.2778640. (paper)

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RC-269 Lu, W. I. P. Roh, D.-M. Geum, S.-H. Kim, J. D. Song, L. Kong and J. A. del Alamo, “10-nm Fin Width InGaSb p-Channel Self-Aligned FinFETs Using Antimonide-Compatible Digital Etch.” IEEE International Electron Devices Meeting, San Francisco, CA, December 2-6, 2017, pp. 433-436. (paper) (slides)

RC-268 Vardi, A., L. Kong, W. Lu, X. Cai, X. Zhao, J. Grajal and J. A. del Alamo, “Self-Aligned InGaAs FinFETs with 5-nm Fin-Width and 5-nm Gate-Contact Separation.” IEEE International Electron Devices Meeting, San Francisco, CA, December 2-6, 2017, pp. 429-412. (paper) (slides)

RC-267 Zhao, X., C. Heidelberger, E. A. Fitzgerald, W. Lu and J. A. del Alamo, “Sub-10 nm Diameter InGaAs Vertical Nanowire MOSFETs.” IEEE International Electron Devices Meeting, San Francisco, CA, December 2-6, 2017, pp. 413-416. (paper) (slides)

RJ-187 Wu, Y. and J. A. del Alamo, “Anomalous Source-side Degradation of InAlN/GaN HEMTs under High-Power Electrical Stress.” IEEE Transactions on Electron Devices, Vol. 65, No. 11, pp. 4435-4441, November 2017. DOI: 10.1109/TED.2017.2754248. (paper)

RJ-186 Vardi, A., J. Lin, W. Lu, X. Zhao, A. Fernando-Saavedra and J. A. del Alamo, “A Si-compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs.” IEEE Transactions on Semiconductor Manufacturing, Vol. 30. No. 4, pp. 468-474. November 2017. (Cover Article) DOI: 10.1109/TSM.2017.2753141. (paper)

RC-266 del Alamo, J. A., X. Zhao, W. Lu, and A. Vardi, “Towards Sub-10 nm Diameter InGaAs Vertical Nanowire MOSFETs and TFETs.” Invited Talk at 5th Berkeley Symposium, Berkeley, CA, October 19-20, 2017. (abstract) (slides)

RC-265 del Alamo, J. A., X. Cai, J. Lin, W. Lu, A. Vardi, and X. Zhao, “CMOS beyond Si: Nanometer-Scale III-V MOSFETs” Invited Talk at 31st Annual IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Miami, FL, October 19-21, 2017, pp. 25-29. (paper) (slides)

RC-264 Lu, W., X. Zhao and J. A. del Alamo, “Towards Sub-10 nm Diameter III-V Vertical Nanowire Transistors.” TECHCON 2017, Austin, TX, September 10-12, 2017. (paper) (slides)

RJ-185 del Alamo, J. A., A. Guo and S. Warnock, ”Gate Dielectric Reliability and Instability in GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors for Power Electronics.” Invited Feature Paper in Journal of Materials Research, Vol. 32, Issue 18, pp. 3458-3468, September 2017. DOI: 10.1557/jmr.2017.363. (paper)

RJ-182 Warnock, S., A. Lemus, J. Joh, S. Krishnan, S. Pendharkar and J. A. del Alamo . ”Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature.” IEEE Transactions on Electron Devices, Vol. 64, No. 8, pp. 1557-9646, Augut 2017. DOI: 10.1109/TED.2017.2717924. (paper)

RJ-181 Kai, N., A. K. Stemberg, E. X. Zhang, J. A. Kozub, R. Jiang, R. D. Schrimpf,R. A. Reed, D. M. Fleetwood, M. L. Alles, D. McMorrow, J. Lin, A. Vardi and J. A. del Alamo, “Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing with Tunable Wavelength.” IEEE Transactions on Nuclear Science, Vol. 64, No. 8, pp. 2069-2078, August 2017. DOI: 10.1109/TNS.2017.2699482. (paper)

RC-263 Gong, H., K. Ni, E. X. Zhang, A. L. Sternberg, J. A. Kozub, K. L. Ryder, R. F. Keller, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, A. Vardi, X. Cai, and J A. del Alamo, “Scaling effects on single-event transients in InGaAs FinFETs.” IEEE Nuclear Science and Space Radiation Effects Conference, New Orleans, LA, July 17-21, 2017. (poster)

RC-262 del Alamo, J. A., “Nanometer-Scale III-V 3D MOSFETs?” Invited Talk at 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, July 15-17, 2017. (slides)

RJ-180 Zhao, X., A. Vardi and J. A. del Alamo, “Sub-thermal Subthreshold Characteristics in Top-down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs.” IEEE Electron Device Letters, Vol. 38, No. 7, pp. 855-858, July 2017. DOI: 10.1109/LED.2017.2702612. (paper)

RJ-179 Lin, J., X. Cai, D. A. Antoniadis, and J. A. del Alamo, “The Importance of Ballistic Resistance in the Modeling of Nanoscale InGaAs MOSFETs.” IEEE Electron Device Letters, Vol. 38, No. 7, pp. 851-854, July 2017. DOI: 10.1109/LED.2017.2700385. (paper)

RJ-178 Lu, W., X. Zhao, D. Choi, S. El Kazzi and J. A. del Alamo, “Alcohol-Based Digital Etch for Sub-10 nm III-V Multigate MOSFETs.” IEEE Electron Device Letters, Vol. 38, No. 5, pp. 548-551, May 2017. DOI: 10.1109/LED.2017.2690598. (paper)

RJ-177 Zhao, X., C. Heidelberger, E. A. Fitzgerald, and J. A. del Alamo, ”Source/Drain Asymmetry in InGaAs Vertical Nanowire MOSFETs.” IEEE Transactions on Electron Devices, Vol. 64, No. 5, pp. 2161-2165, May 2017. DOI: 10.1109/TED.2017.2684707. (paper)

RJ-176 Guo, A. and J. A. del Alamo, “Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs.” IEEE Transactions on Electron Devices, Vol. 64, No.5, pp. 2142-2147, May 2017. DOI: 10.1109/TED.2017.2686840. (paper)

RC-261 Vardi, A., J. Lin, W. Lu, X. Zhao and J. A. del Alamo, “A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs.” Plenary Session Invited Talk Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Indian Wells, CA, AZ, May 22-25, 2017 (paper 3.2). (paper) (slides)

RC-258 del Alamo, J. A., “III-V Channel Transistors.” Invited Short Course Lecture at International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, April 24-27, 2017. (slides)

RC-257 Wu, Y. and J. A. del Alamo, “Gate current degradation in W-band InAlN/AlN/GaN HEMTs under Gate Stress.” IEEE International Reliability Physics Symposium (IRPS), Monterrey, CA, April 2-6, 2017, pp. 3B-4.1-3B-4.7. (paper) (slides)

RC-256 Warnock, S. and J. A. del Alamo, “Off-State TDDB in High-Voltage GaN MIS-HEMTs.” IEEE International Reliability Physics Symposium (IRPS), Monterrey, CA, April 2-6, 2017, pp. 4B-3.1-4B-3.6 (Best Student Paper Award). (paper) (slides)

RJ-175 Hemmi, F., C. Thomas, Y.-C. Lai, A. Higo, A. Guo, S. Warnock, J. A. del Alamo, S. Samukawa, R. Otsuji and T. Suemitsu, “Neutral Beam Etching for Device Isolation in AlGaN/GaN HEMTs.” Physica Status Solidi A: Applications and Materials Science, Vol. 214, No. 3, pp. 1600617, March 2017. (paper)

RJ-174 López-Villegas, J. M., N. Vidal and J. A. del Alamo, “Optimized Toroidal Inductors versus Planar Spiral Inductors in Multilayered Technologies.” IEEE Transactions on Microwave Theory and Techniques, Vol. 65, No. 2, pp. 423-432, February 2017. (paper)

RJ-173 Kai, N., E. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, J. Lin, and J. A. del Alamo, “Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs.” IEEE Transactions on Nuclear Science, Vol. 64, No. 1, pp. 239-244, January 2017. (paper)

RJ-172 Chou, P.-C., S.-H. Chen, T.-E. Hsieh, S. Cheng, J. A. del Alamo, and E. Y. Chang, “Evaluation and reliability assessment of GaN-on-Si MIS-HEMT for power switching applications.” Energies, vol. 10, p. 233, 2017. (paper)

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RC-255 Cai, X., J. Lin, D. A. Antoniadis and J. A. del Alamo, “Electric-Field Induced F- Migration in Self-Aligned InGaAs MOSFETs and Mitigation.” IEEE International Electron Devices Meeting, San Francisco, CA, December 3-7, 2016, pp. 63-66. (paper) (slides)

RC-254 del Alamo, J. A., A. Guo, and S. Warnock, “Reliability and Instability of GaN MIS-HEMTs for Power Electronics.” Invited Talk at Materials Research Society Fall Meeting & Exhibit, Boston, MA, November 27-December 2, 2016. (slides)

RC-253 Warnock, S., A. C. Lemus and J. A. del Alamo, “Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs – The Role of Temperature.” International Workshop on Nitride Semiconductors (IWN), Orlando, FL, October 2-7, 2016. (slides)

RC-252 Wu, Y. and J. A. del Alamo, “Anomalous Source-Side Degradation of InAlN/GaN HEMTs under ON-State Stress.” International Workshop on Nitride Semiconductors (IWN), Orlando, FL, October 2-7, 2016. (slides)

RC-251 Guo, A. and J. A. del Alamo, “NBTI in GaN MOSFETs – SiO2 vs. SiO2/Al2O3.” International Workshop on Nitride Semiconductors (IWN), Orlando, FL, October 2-7, 2016. (slides)

RC-250 Kai, N., A. L. Sternberg, E. X. Zhang, J. A. Kozub, R. Jiang, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, J. Lin, A. Vardi and J. A. del Alamo, “Pulsed-Laser Transient Testing with Tunable Wavelength and High Resolution for High Mobility MOSFETs.” Radiation Effects on Components and Systems Conference (RADECS), Bremen, Germany, September 19-23, 2016. (paper)

RJ-171 Wu, Y. and J. A. del Alamo, “Electrical Degradation of InAlN/GaN HEMTs Operating under ON Conditions.” IEEE Transactions on Electron Devices, Vol. 63, No. 9, pp. 3487-3492, September 2016. (paper)

RJ-170 Vardi, A. and J. A. del Alamo, “Sub-10 nm fin-width self-aligned InGaAs FinFETs.” IEEE Electron Device Letters, Vol. 37, No. 9, pp. 1104-1107, September 2016. (paper)

RJ-169 del Alamo, J. A., A. Vardi, and X. Zhao, ”InGaAs FinFETs for future CMOS.” Invited Paper, Compound Semiconductor Magazine, August/September 2016, pp. 22-26. (paper) (link)

RJ-168 del Alamo, J. A., D. A. Antoniadis, J. Lin, W. Lu, A. Vardi, and X. Zhao, ”Nanometer-Scale III-V MOSFETs.” Invited Paper in IEEE Journal of Electron Devices Society, Vol. 5, No. 5, pp. 205-214, September 2016.(paper)

RJ-167 Lin, J., L. Czornomaz, N. Daix, D. A. Antoniadis and J. A. del Alamo, ”Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated with Silicon Active Substrate (III-V-OIAS).” IEEE Transactions on Electron Devices, Vol. 63, No. 8, pp. 3088-3095, August 2016. (paper)

RC-248 Kai, N., E. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, J. Lin, and J. A. del Alamo, “Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs.” IEEE Nuclear and Space Radiation Effects Conference (NSREC), Portland, OR, July 11-15, 2016. (paper) (slides)

RC-247 Hemmi, F., C. Thomas, Y.-C. Lai, A. Higo, A. Guo, S. Warnock, J. A del Alamo, S. Samukawa, T. Otsuji and T. Suemitsu, “The effect of neutral beam etching on device isolation in AlGaN/GaN HEMTs.” Compound Semiconductor Week (CSW), Toyama, Japan, June 26-30, 2016. (paper)

RC-246 del Alamo, J. A., “Nanometer-Scale III-V CMOS.” Invited Plenary Talk at Compound Semiconductor Week (CSW), Toyama, Japan, June 26-30, 2016. (slides)

RC-245 Vardi, A., J. Lin, W. Lu, X. Zhao and J. A. del Alamo, “High aspect ratio InGaAs FinFETs with sub-20 nm fin width.” VLSI Technology Symposium, Honolulu, HI, June 13-17, 2016, pp. 136-137. (paper) (slides)

RC-244 López-Villegas, J. M., N. Vidal and J. A. del Alamo, “Toroidal versus Spiral Inductors in Multilayered Technologies.” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), San Francisco, CA, May 22-24, 2016. (paper)

RC-243 del Alamo, J. A., “Nanoscale III-V CMOS.” Invited Tutorial at SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Spring, NY, May 16-19, 2016. (slides)

RJ-163 Lin, J., Y. Wu, J. A. del Alamo and D. A. Antoniadis, ”Analysis of Resistance and Mobility in InGaAs Quantum-Well MOSFETs from Ballistic to Diffusive Regimes.” IEEE Transactions on Electron Devices, Vol. 63, No. 4, pp. 1464-1470, April 2016. (paper)

RJ-162 Lin, J., X. Cai, Y. Wu, D. A. Antoniadis, and J. A. del Alamo, ”Record Maximum Transconductance of 3.45 mS/µm for III-V FETs.” IEEE Electron Device Letters, Vol. 37, No. 4, pp. 381-384, April 2016. (paper)

RC-242 Warnock, S. and J. A. del Alamo, “Progressive Breakdown in High-Voltage GaN MIS-HEMTs.” IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, April 17-21, 2016. (paper) (slides)

RC-241 Guo, A. and J. A. del Alamo, “Negative-Bias Temperature Instability of GaN MOSFETs.” IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, April 17-21, 2016. Best Student Paper Award. (paper) (slides)

RJ-161 Lin, J., D. A. Antoniadis, and J. A. del Alamo, ”InGaAs Quantum-Well MOSFET Arrays for Nanometer-Scale Ohmic Contact Characterization.” IEEE Transactions on Electron Devices, Vol. 63, No. 3, pp. 1020-1026, March 2016. (paper)

RC-240 Mendes, L. A., L. W. Li, P. H. Bailey, K. R. DeLong and J. A. del Alamo, “Experiment Lab Server Architecture: a Web Services Approach to Supporting Interactive LabVIEW-based Remote Experiments under MIT’s iLab Shared Architecture.” 13th International Conference on Remote Engineering and Virtual Instrumentation (REV), Madrid, Spain, February 24-26, 2016, pp. 287-299. (paper)

RC-239 Warnock and J. A. del Alamo, “Characterization of Dielectric Breakdown in High-Voltage GaN MIS-HEMTs.” Microelectronics Reliability & Qualification Working Meeting, El Segundo, CA, Feb. 9-10, 2016. (slides)

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RC-238 Lu, W., J. K. Kim, J. F. Klem, S. D. Hawkins and J. A. del Alamo, “An InGaSb p-Channel FinFET.” IEEE International Electron Devices Meeting, Washington, D.C., December 6-9, 2015, pp. 819-822.(paper) (slides)

RC-237 Vardi, A., X. Zhao and J. A. del Alamo, “Quantum-Size Effects in Sub 10 nm Fin Width InGaAs FinFETs.” IEEE International Electron Devices Meeting, Washington, D.C., December 6-9, 2015, pp. 807-810. (paper) (slides)

RJ-159 Lin, J., D. A. Antoniadis, and J. A. del Alamo, ”Impact of Intrinsic Channel Scaling on InGaAs Quantum-Well MOSFETs.” IEEE Transactions on Electron Devices, Vol. 62, No. 11, pp. 3470-3476, November 2015. (paper)

IL-217 del Alamo, J. A., “On the 50th Anniversary of Moore’s Law, Nanoelectronics at a Crossroads” (in Spanish), Universidad Politécnica de Madrid, November 23, 2015. (slides) (video)

RC-236 del Alamo, J. A. , D. A. Antoniadis, J. Lin, W. Lu, A. Vardi, and X. Zhao, “III-V MOSFETs for Future CMOS.” Invited Paper at IEEE Compound Semiconductor IC Symposium, New Orleans, LA, October 11-14, 2015. (paper) (slides)

IL-215 del Alamo, J. A., “Nanoscale III-V Electronics: from Quantum-Well Planar MOSFETs to Vertical Nanowire MOSFETs,” Purdue University, West Lafayette, IN, September 29, 2015. (slides) (video)

RJ-158 Guo, L. W., W. Lu, B. R. Bennett, J. B. Boos, and J. A. del Alamo, ”Ultra-low Resistance Ohmic Contacts for p-channel InGaSb Field-Effect Transistors.” IEEE Electron Device Letters, Vol. 36, No. 6, pp. 546-548, June 2015. (paper)

RC-235 Lin, J., D. A. Antoniadis, and J. A. del Alamo, “A CMOS-compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs.” (Best Student Paper Award) at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Scottsdale, AZ, May 18-21, 2015, pp. 239-242. (slides) (paper)

RC-234 Warnock, S. and J. A. del Alamo, “Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors.” at Compound Semiconductor Manufacturing Technology Conference (CS MANTECH), Scottsdale, AZ, May 18-21, 2015, pp. 311-314. (slides) (paper)

RJ-157  Lin, J., D. A. Antoniadis, and J. A. del Alamo, ”Physics and Mitigation of Excess Off-state Current in InGaAs Quantum-Well MOSFETs.” IEEE Transactions on Electron Devices, Vol. 62, No. 5, pp. 1448-1455, May 2015. (paper)

RC-233 Guo, A. and J. A. del Alamo, “Positive-Bias Temperature Instability of GaN MOSFETs.” IEEE International Reliability Physics Symposium, Monterey, CA, April 19-23, 2015, pp. 6C.5.1-6C.5.7. (paper) (slides)

RC-232  del Alamo, J. A.  “Recent progress in understanding the electrical reliability of GaN High-Electron Mobility Transistors.” Invited Paper at Spring Meeting of Materials Research Society, San Francisco, CA, April 6-10, 2015. Video featured on MRS OnDemand Webinar on Power Electronics with Wide Bandgap Materials, Wednesday, May 20, 2015. (slides) (video)

RJ-156 Vardi, A., W. Lu, X. Zhao and J. A. del Alamo, “Nano-scale Mo Ohmic Contacts to III-V Fins.” IEEE Electron Device Letters, Vol. 36, No. 2, pp. 126-128, February 2015. (paper)

RJ-155 Wu, Y., C.-Y. Chen, and J. A. del Alamo, “Electrical and structural degradation of GaN HEMTs under high-power and high-temperature DC stress.” Journal of Applied Physics, Vol. 117, No. 2, p. 025707, 9 January 2015. (paper)

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RC-231 Zhao, X., A. Vardi and J. A. del Alamo, “InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs Fabricated by a Top-down Approach.” IEEE International Electron Devices Meeting, San Francisco, CA, December 15-17, 2014, pp. 590-593. (paper)

RC-230 Kim, D.-H., T.-W. Kim, R. H. Baek, P. D. Kirsch, W. Maszara, J. A. del Alamo, D. A. Antoniadis, M. Urteaga, B. Brar, H. M. Kwon, C.-S. Shin, W.-K. Park, Y.-D. Cho, S. H. Shin, D. H. Ko and K.-S. Seo, “High-Performance III-V Devices for Future Logic Applications.” Invited paper at IEEE International Electron Devices Meeting, San Francisco, CA, December 15-17, 2014, pp. 578-581. (paper)

RC-229 Lin, J., D. A. Antoniadis and J. A. del Alamo, “Novel Intrinsic and Extrinsic Engineering for High-Performance High-Density Self-Aligned InGaAs MOSFETs: Precise Channel Thickness Control and Sub-40 nm Metal Contacts.” (Roger Haken Best Student Paper Award) IEEE International Electron Devices Meeting, San Francisco, CA, December 15-17, 2014, pp. 575-578. (paper)

RC-228 del Alamo, J. A., “InGaAs MOSFET Electronics.” Invited Plenary Talk at 17th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2014), Jeju Island, Korea, December 7-11, 2014. (slides)

RJ-154 Ni, K., E. X. Zhang, N. C. Hooten, W. G. Bennett, M. W. McCurdy, A. L. Sternberg, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, T.-W. Kim, J. Lin, and J. A. del Alamo. “Single-Event-Transient Response of InGaAs MOSFETs.” IEEE Transactions on Nuclear Science, Vol. 61, No. 6, pp. 3550-3556, December 2014. (paper)

RJ-153 Vardi, A., M. Tordjman, J. A. del Alamo and R. Kalish, “A Diamond:H/MoO3 MOSFET.” IEEE Electron Device Letters, Vol. 35, No. 12, pp. 1320-1322, December 2014. (paper)

RJ-152 Lin, J., D. A. Antoniadis, and J. A. del Alamo, “Off-State Leakage Induced by Band-to-Band Tunneling and Floating-Body Bipolar Effect in InGaAs Quantum-Well MOSFETs.” IEEE Electron Device Letters, Vol. 35, No. 12, pp. 1203-1205, December 2014. (paper)

RJ-151 Wu, Y., C.-Y. Chen, and J. A. del Alamo, “Activation Energy of Drain-Current Degradation in GaN HEMTs under High-Power DC Stress.” Microelectronics Reliability, Vol. 54, No. 12, pp. 2668-2674, December 2014. (paper)

RJ-150 Guo, L. W., L. Xia, B. R. Bennett, J. B. Boos, M. G. Ancona and J. A. del Alamo, “Enhancing p-channel InGaSb QW-FETs via Process-induced Compressive Uniaxial Strain.” IEEE Electron Device Letters, Vol. 35, No. 11, pp. 1088-1090, November 2014. (paper)

RC-227 del Alamo, J. A., “Recent progress in understanding the electrical reliability of GaN High-Electron Mobility Transistors.” Invited Talk at IEEE Conference on Reliability Science for Advanced Materials and Devices (RSAMD-2014), Golden, CO, September 7-9, 2014. (slides)

RJ-149 Riel, H., L.-E. Wernersson, M. Hong, and J. A. del Alamo, “III-V compound semiconductor transistors: from planar to nanowire structures.” Invited review. MRS Bulletin, Vol. 39, pp. 668-677, August 2014. (paper)

NR-116 del Alamo, J. A., “Nanometer-Scale III-V Electronics.” The Age of Si Symposium, MIT Campus, July 25, 2014. (slides)

RC-226 Ni, K., E. X. Zhang, M. W. McCurdy, N. C. Hooten, W. G. Bennett, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, M. L. Alles, T. W. Kim and J. A. del Alamo, “Single Event Transient Response of InAs Quantum-Well MOSFETs.” Nuclear and Space Radiation Effects Conference (NRSEC), Paris, France, July 14-18, 2014. (slides)

RC-225 Lin, J., L. Czornomaz, N. Daix, D. Antoniadis, and J. A. del Alamo, “Ultra-Thin-Body Self-Aligned InGaAs MOSFETs on Insulator (III-V-O-I) by a Tight-Pitch Process.” 72nd IEEE Device Research Conference, Santa Barbara, CA, June 22-25, 2014, pp. 217-218. (paper) (slides)

RC-224 Vardi, A., X. Zhao, and J. A. del Alamo, “InGaAs Double-Gate Fin-Sidewall MOSFETs.” 72nd IEEE Device Research Conference, Santa Barbara, CA, June 22-25, 2014, pp. 219-220. (paper) (slides)

RC-223 Gao, F., C. V. Thompson, J. A. del Alamo, and T. Palacios, “Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs.” Invited Talk at CS MANTECH, Denver, CO, May 19-22, 2014. (paper) (slides)

RC-222 Wu, Y., C.-Y. Chen, and J. A. del Alamo, “Temperature-Accelerated Degradation of GaN HEMTs under High-Power Stress: Activation Energy of Drain Current Degradation.” Reliability of Compound Semiconductors Workshop (ROCS), Denver, CO, May 19, 2014, pp. 69-73. (paper) (slides)

RJ-148 Zhao, X. and J. A. del Alamo, “Nanometer-scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs.” IEEE Electron Device Letters, Vol. 35, No. 4, pp. 521-523, May 2014. (paper)

RJ-147 Lin, J., X. Zhao, D. A. Antoniadis, and J. A. del Alamo, “A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs.” IEEE Electron Device Letters, Vol. 35, No. 4, pp. 440-442, April 2014. (paper)

RC-221 del Alamo, J. A., “III-V MOSFETs for CMOS: Recent Advances in Process Technology.” Invited Talk at Semicon Korea 2014, Seoul, Korea, February 12-14, 2014. (slides)

RJ-146 Lu, W., A. Guo, A. Vardi, and J. A. del Alamo, “A Test Structure to Characterize Nano-scale Ohmic Contacts in III-V MOSFETs.” IEEE Electron Device Letters, Vol. 35, No. 2, pp. 178-180, February 2014. (paper)

RJ-145 Gao, F., S. C. Tan, J. A. del Alamo, C. V. Thompson, and T. Palacios, “Impact of Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs.” IEEE Transactions on Electron Devices, Vol. 61, No. 2, pp. 437-444, February 2014. (paper)

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RC-220 Zhao, X., J. Lin, C. Heidelberger, E. A. Fitzgerald and J. A. del Alamo, “Vertical Nanowire InGaAs MOSFETs Fabricated by a Top-down Approach.” IEEE International Electron Devices Meeting, Washington DC, December 9-11, 2013, pp. 695-698. (paper) (slides)

RC-219 Lin, J., X. Zhao, T. Yu, D. A. Antoniadis, and J. A. del Alamo, “A New Self-aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight Pitch Process.” IEEE International Electron Devices Meeting, Washington DC, December 9-11, 2013, pp. 421-424. (paper) (slides)

RC-218 Jin, D., J. Joh, S. Krishnan, N. Tipirneni, S. Pendharkar and J. A. del Alamo, “Total current collapse in High-Voltage GaN MIS-HEMTs induced by Zener trapping.” IEEE International Electron Devices Meeting, Washington DC, December 9-11, 2013, pp. 148-151. (paper) (slides)

RC-217 del Alamo, J. A., D. Antoniadis, A. Guo, D.-H. Kim, T.-W. Kim, J. Lin, W. Lu, A. Vardi, and X. Zhao, “InGaAs MOSFETs for CMOS: recent advances in process technology.” Invited Talk at IEEE International Electron Devices Meeting, Washington DC, December 9-11, 2013, pp. 24-27. (paper) (slides)

RJ-144   Jin, D. and J. A. del Alamo, “Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors.” IEEE Transactions on Electron Devices, Vol. 60, No. 10, pp. 3190-3196, October 2013. (paper)

RJ-143 Araghchini, M., J. Chen, V. Doan-Nguyen, D. V. Harburg, D. Jin, J. Kim, M. S. Kim, S. Lim, B. Lu, D. Piedra, J. Qiu, J. Ranson, M. Sun, X. Yu, H. Yun, M. G. Allen, J. A. del Alamo, G. DesGroseilliers, F. Herrault, J. H. Lang, C. G. Levey, C. Murray, D. Otten, T. Palacios, D. J. Perreault and C. R. Sullivan, “A technology overview of the PowerChip development program.” IEEE Transactions on Power Electronics, Vol. 28, No. 9, pp. 4182-4201, September 2013. (paper)

RJ-142 Wu, J. H. and J. A. del Alamo, “Design and Modeling of Faraday Cages for Substrate Noise Isolation.” Solid State Electronics Vol. 85, pp. 6-11 (2013). (paper)

RC-216 Kim, D.-H., T.-W. Kim, R. Hill, C. Y. Kang, C. Hobbs, J. A. del Alamo, W. Maszara and P. Kirsch, “High-Frequency Characteristics in InGaAs Quantum-Well MOSFETs.” Invited paper at International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan, September 25-27, 2013. (paper)

RC-215 del Alamo, J. A., “Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS Technologies.” Invited Joint Plenary Talk, European Solid-State Electron Devices Conference (ESSDERC) and European Solid-State Electron Circuits Conference (ESSCIRC), Bucharest, Romania, September 16-20, 2013. (paper) (slides)

RC-213 del Alamo, J. A., “InGaAs Nanoelectronics: from THz to CMOS.” Invited Plenary Talk, 9th International Conference on Electron Devices and Solid State Circuits (EDSSC), Hong-Kong, June 3-5, 2013. (slides)

RC-211 del Alamo, J. A. , “THz III-V HEMT Technology.” Short Course on THz Transistors and Packaging Integration Technologies, International Wireless Symposium, Beijing, China, April 14-18, 2013. (slides)

NR-99 del Alamo, J. A., “III-Vs for CMOS Beyond Silicon.” MIT Lincoln Laboratory Advanced Research and Technology Symposium, MIT Lincoln Laboratory, Feb. 26-27, 2013. (slides)

RJ-141 Kim, D.-H., T.-W. Kim, R. J. W. Hill, C. D. Young, C. Y. Kang, C. Hobbs, P. Kirsch, J. A. del Alamo, and R. Jammy, “High-Speed E-Mode InAs QW MOSFET with Al2O3 Insulator for Future RF Applications.” IEEE Electron Device Letters, Vol. 34, No. 2, pp. 196-198, February 2013. (paper)

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RC-210 Kim, T.-W. , R. J. W. Hill, D. Kim, D.-H. Koh, R. Lee, M. H Wong, T. Cunningham, J. A. del Alamo, S. K. Banerjee, S. Oktyabrsky, A. Greene, Y. Ohsawa, Y. Trickett, G. Nakamura, Q. Li, K. M. Lau, C. Hobbs, P. D. Kirsch and R. Jammy, “ETB-QW InAs MOSFETs with Scaled Body for Improved Electrostatics.” IEEE International Electron Devices Meeting, San Francisco, CA, December 10-12, 2012, pp. 765-768. (paper)

RC-209 Lin, J., D. A. Antoniadis, and J. A. del Alamo, “Sub-30 nm In As Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO2 Insulator.” IEEE International Electron Devices Meeting, San Francisco, CA, December 10-12, 2012, pp. 757-760. (paper) (slides)

RC-208 del Alamo, J. A., “Nanometer-Scale III-V CMOS.” Short Course on the Future of Semiconductor Devices and Integrated Circuits at 34th IEEE Compound Semiconductor IC Symposium (CSICS), San Diego, CA, October 14, 2012. (slides)

RJ-139 Jin, D. and J. A. del Alamo, “Impact of high-power stress on dynamic ON resistance of high-voltage GaN HEMTs.” Microelectronics Reliability, Vol. 52, pp. 2875-2879 (2012). (paper)

RJ-140 Kim, D.-H., J. A. del Alamo, D. A. Antoniadis, J. Li, J.-M. Kuo, P. Pinsukanjana, Y.-C. Kao, P. Chen, A. Papavasiliou, C. King, E. Regan, M. Urteaga, B. Brar, and T.-W. Kim, “Lg=60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator.” Applied Physics Letters, Vol. 101, p. 223507, 2012. (paper)

RJ-138   Lin, C.-H., T. A. Merz, D. R. Doutt, J. Joh, J. A. del Alamo, U. K. Mishra, and L. J. Brillson, “Strain and temperature dependence of defect formation at AlGaN/GaN high electron mobility transistors on a nanometer scale.” IEEE Transactions on Electron Devices, Vol. 59, No. 10, pp. 2667-2674, October 2012. (paper)

RC-207 del Alamo, J. A. and D.-H. Kim, “InAs High-Electron Mobility Transistors on the Path to THz Operation.” Invited paper at International Conference on Solid State Devices and Materials (SSDM), Kyoto, Japan, September 25-27, 2012. (paper) (slides)

RC-204 Malani, S., G. N. S. Prasanna, J. A. del Alamo, J. L. Hardison, K. Moudgalya, and V. Chopella, “Issues faced in a Remote Instrumentation Laboratory.” IEEE International Conference on Technology for Education (T4E), Hyderabad, India, July 18-20, 2012. (paper)

RC-203 Kim, T.-W., R. J. W. Hill, D.-H. Kim, J. A. del Alamo, C. D. Young, D. Veksler, C. Y. Kang, J. Oh, C. Hobbs, P. Kirsch and R. Jammy, “InAs Quantum-Well MOSFET (Lg=100 nm) for Logic and Microwave Applications.” Invited talk at 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012). Naja (Japan), June 27-29, 2012. (paper) (slides)

RC-202 Kim, T.-W., R. J. W. Hill, C. D. Young, D. Veksler, J. Oh, C. Y. Kang, D.-H. Kim, J. A. del Alamo, C. Hobbs, P. Kirsch and R. Jammy, “InAs Quantum-Well MOSFET (Lg=100 nm) with Record High gm, fT and fmax.” 2012 Symposium on VLSI Technology. Honolulu (HI), June 12-15, 2012, pp. 179-180. (paper) (slides)

RC-201 Jin, D. and J. A. del Alamo, “Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs.” 24th IEEE International Symposium on Power Semiconductor Devices and ICs. Brugge (Belgium), June 3-7, 2012. (paper)

RJ-136 Lin, J., T.-W. Kim, D. A. Antoniadis and J. A. del Alamo, “A Self-Aligned InGaAs Quantum-Well MOSFET Fabricated through a Lift-off Free Front-end Process.” Applied Physics Express, Vol. 5, p. 064002, May 16, 2012. (paper)

RC-200 Jin, D. and J. A. del Alamo, “Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs.” 2012 Reliability of Compound Semiconductors Symposium (ROCS). Boston (MA), April 23, 2012. (paper) (slides)

RJ-135 Li, L., J. Joh, J. A. del Alamo and C. V. Thompson, “Spatial distribution of structural degradation under high-power stress in AlGaN/GaN High-Electron Mobility Transistors.” Applied Physics Letters, Vol. 100, Issue 17, p. 172109, April 2012. (paper)

RC-199 del Alamo, J. A., “Recent progress in understanding the DC and RF reliability of GaN high-electron mobility transistors” Invited talk to be presented at Materials Research Society Spring Meeting, San Francisco, CA, April 9-13, 2012. (slides)

RC-198 Lin, C.-H., T. A. Merz, D. R. Doutt, J. Joh, J. A. del Alamo, U. K. Mishra, and L. J. Brillson, “Strain and temperature dependence of defect formation at AlGaN/GaN high-electron mobility transistors on a nanometer scale.” Materials Research Society Spring Meeting, San Francisco, CA, April 9-13, 2012. (slides)

RJ-134 Joh, J. and J. A. del Alamo, “Impact of gate placement on RF degradation in GaN high electron mobility transistors.” Microelectronics Reliability, Vol. 52, No. 1, pp. 33-38, January 2012. (paper)

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RC-197 Kim, D.-H., B. Brar and J. A. del Alamo, “fT=688 GHz and fmax=800 GHz in Lg=40 nm In0.7Ga0.3As MHEMTs with gm,max>2.7 mS/um.” IEEE International Electron Devices Meeting, Washington DC, December 5-7, 2011. (paper) (slides)

RC-196 Xia, L., V. Tokranov, S. R. Oktyabrsky, and J. A. del Alamo, “Performance Enhancement of p-channel InGaAs Quantum-Well FETs by Superposition of Process-Induced Uniaxial Strain and Epitaxially-grown Biaxial Strain.” IEEE International Electron Devices Meeting, Washington DC, December 5-7, 2011. (paper) (slides)

RJ-133   del Alamo, J. A. “Nanometer-scale electronics with III-V compound semiconductors.” Invited review paper . Nature, Vol. 479, pp. 317-323, 17 November 2011. (paper)

RC-195 del Alamo, J. A., “InAs HEMTs: the path to THz electronics?” Invited talk at Workshop on High-Performance Narrow-Bandgap HEMT Technology for Advanced Microwave Front-Ends: Towards the End of the Roadmap? European Microwave Week, Manchester, UK, October 9, 2011. (slides)

RJ-132 Xia, L., V. Tokranov, S. R. Oktyabrsky, and J. A. del Alamo, “Experimental Study of <100> Uniaxial Stress Effects on P-channel GaAs Quantum-Well FETs.” IEEE Transactions on Electron Devices, Vol. 58, No. 8, pp. 2597-2603, August 2011. (paper)

RJ-131 Kharche, H., G. Klimeck, D.-H. Kim, J. A. del Alamo, and M. Luisier, “Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs.” IEEE Transactions on Electron Devices, Vol. 58, No. 7, pp. 1963-1971, July 2011. (paper)

RC-194 del Alamo, J. A. and J. Joh,”High-Voltage DC and RF Power Reliability of GaN HEMTs.” Invited talk at 9th International Conference on Nitride Semiconductors (ICNS), Glasgow, UK, July 10-15, 2011. (slides)

RC-193 Gogineni, U., J. A. del Alamo and A. Valdes Garcia, “Analytical Model for RF Power Performance of Deeply Scaled CMOS Devices.” IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Baltimore, MD, June 5-7, 2011. (paper) (slides)

RC-192 Xia, L., V. Tokranov, S. Oktyabrsky and J. A. del Alamo, “Mobility Enhancement of Two-Dimensional hole Gas in an In0.24 Ga0.76 As Quantum Well by <100> Uniaxial Strain.” 38th International Symposium on Compound Semiconductors (ISCS), Berlin, Germany, May 22-26, 2011. (paper) (slides)

RC-191 Kim, T.-W and J. A. del Alamo, “Injection Velocity in Thin-Channel InAs HEMTs.” 23rd International Conference on Indium Phosphide and Related Materials (IPRM), Berlin, Germany, May 22-26, 2011. (paper) (slides)

RC-190 del Alamo, J. A., D.-H. Kim, T.-W. Kim, D. Jin, and D. A. Antoniadis, “III-V CMOS: What Have we Learned from HEMTs?” Invited talk at the 23rd International Conference on Indium Phosphide and Related Materials (IPRM), Berlin, Germany, May 22-26, 2011. (paper) (slides)

RC-189 del Alamo, J. A., “The High-Electron Mobility Transistor at 30: impressive accomplishments and exciting prospects.” Invited Plenary Session talk at International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), Palm Springs, CA, May 16-19, 2011, pp. 17-22. (paper) (slides)

RC-188 Joh, J. and J. A. del Alamo, “Impact of gate placement on RF degradation in GaN high electron mobility transistors.” 2011 Reliability of Compound Semiconductors Workshop (ROCS), Palm Springs, CA, May 16, 2011, pp. 133-136. (paper) (slides)

RC-187 del Alamo, J. A., “III-V CMOS: the key to sub-10 nm electronics?” Invited talk at Materials Research Society Spring Meeting, San Francisco, CA, April 25-29, 2011. (slides)

RC-186 Joh, J. and J. A. del Alamo, “Time evolution of electrical degradation in GaN high electron mobility transistors.” IEEE International Reliability Physics Symposium, Monterey, CA, April 10-14, 2011. (paper) (slides)

RJ-130 Kim, T.-W. and J. A. del Alamo, “InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance.” Electronics Letters, Vol. 47, No. 6, pp. 406-407, March 17, 2011. (paper)

RJ-129 Xia, L., B. Boos, B. R. Bennett, M. G. Ancona, and J. A. del Alamo, “Hole Mobility Enhancement through <110> Uniaxial Strain in In0.41Ga0.59Sb Quantum-Well Field-Effect transistors.” Applied Physics Letters, Vol. 98, 053505, 2011. (paper)

RJ-128 Joh, J. and J. A. del Alamo, “A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors.” IEEE Transactions on Electron Devices, Vol. 48, No. 1, pp. 132-140, January 2011. (paper)

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RC-185 Kim, T.-W., D.-H. Kim, and J. A. del Alamo, “60 nm Self-Aligned-Gate InGaAs HEMTs with Record High-Frequency Characteristics.” IEEE International Electron Devices Meeting, San Francisco, CA, December 6-8, 2010, pp. 696-699. (Reprint)

RC-184 Kim, D.-H., J. A. del Alamo, P. Chen, W. Ha, M. Urteaga and B. Brar, “50 nm E-Mode In0.7Ga0.3As PHEMTs on 100 mm InP Substrate with fmax>1 THz.” IEEE International Electron Devices Meeting, San Francisco, CA, December 6-8, 2010, pp. 692-695. (Reprint)

RC-183 Joh, J. and J. A. del Alamo, “RF Power Degradation of GaN High Electron Mobility Transistors.” IEEE International Electron Devices Meeting, San Francisco, CA, December 6-8, 2010, pp. 468-471. (Reprint)

RC-182 del Alamo, J. A., “III-V CMOS: A Sub-10 nm Electronics Technology?” Invited talk at 57th American Vacuum Society International Symposium and Exhibition, Albuquerque, NM, October 17-22, 2010. (slides)

RC-180 Joh, J., P. Makaram, C. V. Thompson, and J. A. del Alamo, “Planar View of Structural Degradation in GaN High Electron Mobility Transistors: Time and Temperature Dependence.” Invited talk at International Workshop on Nitride Semiconductors (IWN 2010), Tampa, FL, Sept. 19-24, 2010. (slides)

RJ-128 Joh, J. and J. A. del Alamo, “A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors.” IEEE Transactions on Electron Devices, Vol. 48, No. 1, pp. 132-140, January 2011. (paper)

RJ-127 Kim, D.-H. and J. A. del Alamo, “30 nm InAs PHEMTs with f T =644 GHz and f max =681 GHz.” IEEE Electron Device Letters, Vol. 31, No. 8, pp. 806-808, August 2010. (paper)

RJ-126 Kim, D.-H. and J. A. del Alamo, “Scalability of sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications.” IEEE Transactions on Electron Devices, Vol. 57, No. 7, pp. 1504-1511, July 2010. (paper)

RJ-125 Makaram, P., J. Joh, J. A. del Alamo, T. Palacios, C. V. Thompson, “Evolution of Structural Defects Associated with Electrical Degradation in AlGaN/GaN HEMTs.” Applied Physics Letters, Vol. 96, p. 233509, 2010. (paper)

RC-179 Makaram, P., J. Joh, C. V. Thompson, J. A. del Alamo, and T. Palacios, “Formation of Structural Defects in AlGaN/GaN High Electron Mobility Transistors under Electrical Stress.” Electronics Materials Conference, Notre Dame, IN, June 23-25, 2010. (paper) (slides)

RC-178 del Alamo, J. A., D.-H. Kim, D. Jin, and T.-W. Kim, “10 nm CMOS: The Prospects for III-Vs.” Invited talk at Workshop on Post-Si CMOS Electronic Devices: the Role of Ge and III-V Materials of the European Materials Research Society Symposium, Strasbourg, France, June 8-10, 2010. (slides)

RC-177 Xia, L. and J. A. del Alamo, “Mobility enhancement in Indium-rich N-channel InxGa1-xAs HEMT by Application of <110> Uniaxial Strain.” 22nd International Conference on Indium Phosphide and Related Materials, Kagawa, Japan, May 31-June 4, 2010, pp. 504-507. (paper)

RC-176

Kim, T.-W., D.-H. Kim and J. A. del Alamo, “Logic Characteristics of 40 nm thin-channel InAs HEMTs.” 22nd International Conference on Indium Phosphide and Related Materials, Kagawa, Japan, May 31-June 4, 2010, pp. 496-499. (paper) (slides)

BC-2 Liu, Y., H. S. Pal., M. S. Lundstrom, D.-H. Kim, J. A. del Alamo, and D. A. Antoniadis, “Device Physics and Performance Potential of III-V Field-Effect Transistors”; book chapter in “Fundamental of III-V Semiconductor MOSFETs”, S. Oktyabrsky and P. D. Ye (editors), Springer Science, pp. 31-49 (2010). (paper)

RJ-124 Wu, J. H., and J. A. del Alamo, “Fabrication and Characterization of through-Substrate Interconnects.” IEEE Transactions on Electron Devices, Vol. 57, No. 6, pp. 1261-1268, June 2010. (paper)

RC-175

Joh, J. and J. A. del Alamo, “Reliability and Failure Mechanisms of GaN-based HEMTs.” Invited talk at 10th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2010), Darmstadt/Seeheim, Germany, May 19-21, 2010, pp. 57-58.

RC-174

Joh, J., J. A. del Alamo, K. Langworthy, S. Xie, and T. Zheleva, “Material Degradation around the Critical Voltage in GaN HEMTs.” 34th European Workshop on Compound Semiconductors and Integrated Circuits (WOCSDICE 2010), Darmstadt/Seeheim, Germany, May 17-19, 2010, pp. 211-212.

RC-173

Joh, J., J. A. del Alamo, K. Langworthy, S. Xie, and T. Zheleva, “Correlation between electrical and material degradation in GaN HEMTs stressed beyond the critical voltage.” Reliability of Compound Semiconductors Workshop (ROCS 2010), Portland, OR, May 17, 2010. Paper to be published in Microelectronics Reliability. (paper)

RC-172

Demirtas, S. and J. A. del Alamo, “Effect of Trapping on the Critical Voltage for Degradation in GaN High Electron Mobility Transistors.” 2010 International Reliability Physics Symposium, Anaheim, CA, May 2-6, 2010, pp. 134-138. (paper)

RJ-123

Gogineni, U., H. Li, J. A. del Alamo, S. Sweeney, J. Wang, and B. Jagannathan, “Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices.” IEEE Journal of Solid State Circuits, Vol. 45, No. 5, pp. 998-1006, May 2010. (paper)

RC-171 del Alamo, J. A. and D.-H. Kim, “The prospects for 10 nm III-V CMOS.” Invited talk at 2010 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, April 26-28, 2010, pp. 166-167.

RC-170 Kim, D.-H. and J. A. del Alamo, “InGaAs HFETs for Beyond-the-roadmap CMOS.” Invited paper at 217th Electrochemical Society Meeting, Wide-Bandgap Semiconductor Materials and Devices 11 and State-of-the-art Program on Compound Semiconductors 52 (SOTAPOCS 52), Vancouver, BC, April 25-30, 2010.

RJ-122   Hisaka, T., H. Sasaki, T. Katoh, K. Kanaya, T. Oku, N. Yoshida, A. A. Villanueva, and J. A. del Alamo, “Simultaneous achievement of high performance and high reliability in a 38/77 GHz InGaAs/AlGaAs PHEMT MMIC.” IEICE Electronics Express, Vol. 7, No. 8, pp. 558-562, April 2010. (paper)

RC-169 Hardison, J. L., K. DeLong, V. J. Harward, J. A. del Alamo, R. Shroff, and O. Oyabode, “Enabling Remote Design and Troubleshooting Experiments Using the iLab Shared Architecture.” Earth & Space 2010 Conference, Honolulu, Hawaii, March 14-17, 2010. Best paper award.

RJ-121 Waldron, N., D.-H. Kim and J. A. del Alamo, “A Self-Aligned InGaAs HEMT Architecture for Logic Applications.” IEEE Transactions on Electron Devices, Vol. 56, No. 1, pp. 297-304, January 2010. (paper)

RC-168 Gogineni, U., J. A. del Alamo, and C. Putnam, “RF Power Potential of 45 nm CMOS Technology.” 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2010), New Orleans, LA, January 11-13, 2010, pp. 204-207. (paper)

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RC-167 Kim, T.-W., D.-H. Kim, and J. A. del Alamo, “30 nm In 0.7 Ga 0.3 As Inverted-Type HEMTs with Reduced Gate Leakage Current for Logic Applications.” 2009 IEEE International Electron Devices Meeting, Baltimore, MD, December 7-9, 2009, pp. 483-485. (paper) (slides)

RC-166 Kharche, N., G. Klimeck, D.-H. Kim, J. A. del Alamo and M. Luisier, “Performance Analysis of Ultra-Scaled InAs HEMTs.” 2009 IEEE International Electron Devices Meeting, Baltimore, MD, December 7-9, 2009, pp. 491-494. (paper) (slides)

RC-165 Jin, D., D.-H. Kim, T.-W. Kim and J. A. del Alamo, “Quantum Capacitance in Scaled Down III-V FETs.” 2009 IEEE International Electron Devices Meeting, Baltimore, MD, December 7-9, 2009, pp. 495-498. (paper) (slides)

RC-164 Kim, D.-H., J. A. del Alamo, D. A. Antoniadis, and B. Brar, “Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs.” 2009 IEEE International Electron Devices Meeting, Baltimore, MD, December 7-9, 2009, pp. 861. (paper) (slides)

RJ-119 Xia, L. and J. A. del Alamo, “Impact of <110> Uniaxial Strain on N-Channel In 0.15 Ga 0.85 As High Electron Mobility Transistors.” Applied Physics Letters, Vol. 95, p. 243504, 2009. (paper)

RJ-118 Joh, J., J. A. del Alamo, U. Chowdhury, H.-Q. Tserng and J. Jimenez, “Measurement of Channel Temperature in GaN High Electron Mobility Transistors.” IEEE Transactions on Electron Devices, Vol. 56, No. 12, pp. 2895-2901, December 2009. (paper)

RJ-117 Lin, C.-H., T. A. Merz, D. R. Doutt, M. J. Hetzer, J. Joh, J. A. del Alamo, U.K. Mishra, and L. J. Brillson, “Nanoscale Mapping of Temperature and Defect Evolution Inside Operating AlGaN/GaN High Electron Mobility Transistors.”Applied Physics Letters, Vol. 95, p. 033510, 2009. (paper)

RC-163 Joh, J. and J. A. del Alamo, “Trapping vs. Permanent Degradation in GaN High Electron Mobility Transistors.” 8 th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, October 18-23, 2009. (slides) (abstract)

RC-162 Demirtas, S and J. A. del Alamo, “Critical voltage for electrical reliability of GaN High Electron Mobility Transistors on Si Substrate.” Reliability of Compound Semiconductors Workshop 2009 (ROCS 2009), Greensboro, NC, October 11, 2009, pp. 53-56.

RC-161 Joh, J., F. Gao, T. Palacios and J. A. del Alamo, “A model for the critical voltage for electrical degradation of GaN high electron mobility transistors.” Reliability of Compound Semiconductors Workshop 2009 (ROCS 2009), Greensboro, NC, October 11, 2009, pp. 3-5.

RC-160 del Alamo, J. A. and J. Joh, “GaN HEMT Reliability.” Invited talk at 20 th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France, October 5-9, 2009. Paper published in Microelectronics Reliability, vol. 49, pp. 1200-1206, 2009.
(paper)(slides)

RC-159 Gogineni, U., J. A. del Alamo, C. Putnam and D. Greenberg, “Modeling Frequency Response of 65 nm CMOS RF Power Devices.” TECHCON 2009, Austin, TX, September 14-15, 2009.
(paper) (slides)

RC-158 del Alamo, J. A. and D.-H. Kim, “III-V’s: From THz HEMTs to CMOS.” Plenary Invited talk at 2009 Topical Workshop on Heterostructure Microelectronics, Nagano, Japan, August 25-28, 2009. (slides) (abstract)

RC-157 C.-H. Lin, T. A. Merz, D. R. Doutt, M. J. Hetzer, J. Joh, J. A. del Alamo, U. K. Mishra, and L. J. Brillson, “Nanoscale Temperature Distribution, Defect Mapping and Evolution Inside Active AlGaN/GaN High Electron Mobility Transistors.” 51 st Electronics Materials Conference, University Park, Pennsylvania, June 24-26, 2009. (abstract)

RC-156 Soumare, H., R. Shroff, J. L. Hardison, J. A. del Alamo, V. J. Harward, P. H. Bailey, and K. K. DeLong, “A Versatile Internet-Accessible Electronics Workbench with Troubleshooting Capabilities.” Sixth International Conference on Remote Engineering and Virtual Instrumentation, Bridgeport, CT, June 22-25, 2009. Paper to be published in International Journal of Online Engineering.

RC-155 Jiwaji, A., J. Hardison, K. P. Ayodele, S. Stevens, A, Mwanbela, V. J. Harward, J. A. del Alamo, B. Harrison, and S. Gikandi, “Collaborative Development of Remote Electronics Laboratories: The ELVIS iLab.” 2009 ASEE Annual Conference & Exposition., Austin, TX, June 14-17, 2009.

RC-154 Gogineni, U., H. Hongmei, S. Sweeney, J. Wang, B. Jagannathan, and J. A. del Alamo, “Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices.” 2009 IEEE Radio Frequency Integrated Circuit Symposium, Boston, MA, June 7-9, 2009, pp. 163-166.

RC-153 Demirtas, S., J. A. del Alamo, D. A. Gajewski, and A. Hanson, “Lifetime Estimation of Intrinsic Silicon Nitride MIM Capacitors in a GaN MMIC Process.” Compound Semiconductor International Symposium on Manufacturing Technology (CS-MANTECH), Tampa, FL, May 18-21, 2009.

RC-152 del Alamo, J. A., J. Joh, and A. A. Villanueva, “Electrical, thermal and environmental reliability of transistors: experimental techniques to identify fundamental degradation mechanisms.” Workshop on Reliability and Manufacturing, Compound Semiconductor International Symposium on Manufacturing Technology (CS-MANTECH), Tampa, FL, May 18-21, 2009.

RC-151 Kim, D.-H. and J. A. del Alamo, “Scalability of sub-100 nm thin-channel InAs PHEMTs.” 2009 International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, May 10-14, 2009, pp. 132-135.

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RC-149 Joh, J., S. Demirtas, and J. A. del Alamo, “Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors.” 2008 IEEE International Electron Devices Meeting, San Francisco, CA, December 15-17, 2008, pp. 461-464.

RC-148 Joh, J., J. A. del Alamo, U. Chowdhury and J. L. Jimenez, “Correlation Between RF and DC Reliability in GaN High Electron Mobility Transistors.” 2008 Reliability of Compound Semiconductors Workshop, Monterey, CA, October 12, 2008, pp.185-188.

RC-147 Hisaka, T., H. Sasaki, Y. Nogami, K. Hosogi, N. Yoshida, A. A. Villanueva, J. A. del Alamo, S. Hasegawa and H. Asahi, “Degradation Mechanisms of GaAs PHEMTs under Operation in High Humidity Conditions.” 2008 Reliability of Compound Semiconductors Workshop, Monterey, CA, October 12, 2008, pp.109-113.

RJ-116 Kim, D.-H. and J. A. del Alamo, “Lateral and Vertical Scaling of In 0.7 Ga 0.3 As HEMTs for Post-Si-CMOS Logic Applications.” IEEE Transactions on Electron Devices, 55 (10), 2546-2553, October 2008.

RJ-115 Chowdhury, U., J. L. Jimenez, C. Lee, E. Beam, P. Saunier, T. Balistreri, S.-Y. Park, T. Lee, J. Wang, M. J. Kim, J. Joh, and J. A. del Alamo, “TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs.” IEEE Electron Device Letters, Vol. 29, No. 10, pp. 1098-1100, October 2008.

RC-146 Harward, V. J, J. A. del Alamo, K. Ayodele, P. H. Bailey, K. DeLong, J. Hardison, B. Harrison, O. Ilori, A. Jiwaji, S. R. Lerman, P. D. Long, R. Shroff and H. Soumare, “Building an Ecology of Online Labs.” Keynote speech at International Conference on Interactive Computer Aided Learning, Villach, Austria, September 24-28, 2008.

RC-145 Fukuda, S., T. Suemitsu, T. Otsuji, C.-H. Kim, and J. A. del Alamo, “Analysis of Gate Delay Scaling in In 0.7 Ga 0.3 As-Channel HEMTs.” International Conference on Solid State Devices and Materials, Tsukuba, Japan, September, 2008, pp. 166-167. Paper published in Japanese Journal of Applied Physics, 48, 04C086 (2009).

RC-144 del Alamo, J. A., D.-H. Kim, and N. Waldron, “III-V CMOS: Challenges and Opportunities.” Invited paper at International Conference on Solid State Devices and Materials, Tsukuba, Japan, September, 2008, pp. 28-29.

RC-143 Balistreri, A., J. Jimenez, M. Y. Kao, C. Lee, P. Saunier, P. C. Chao, K. Chu, A. Immorlica, A. Souzis, I. Eliashevich, S. Guo, J. Ditri, P. Bronecke, E. Piner, J. del Alamo, J. Joh, and M. Shur, “Galllium Nitride HEMT Development for Decade-Wide Amplifier Applications.” GOMAC 2008.

RJ-114 Kim, D-H. and J. A. del Alamo, “30 nm InAs Pseudomorphic HEMTs on InP Substrate with Current-Gain Cut-off Frequency of 628 GHz.” IEEE Electron Device Letters, Vol. 29, No. 8, pp. 830-833, August 2008.

RJ-113 Joh, J., J. A. del Alamo and J. Jimenez, “A Simple Current Collapse Measurement Technique for GaN High Electron Mobility Transistors.” IEEE Electron Device Letters, Vol. 29, No. 7, pp. 665-667, July 2008.

RJ-112 Villanueva, A. A., J. A. del Alamo, T. Hisaka, K. Hayashi, and M. Somerville, “Degradation Uniformity of RF Power GaAs PHEMTs under Electrical Stress.” Invited Paper , IEEE Transactions on Device and Materials Reliability, Special Issue on III-V Compound Semiconductor Device Reliability, Vol. 8, No. 2, pp. 283-288, June 2008.

RJ-111 Harward, V. J., J. A. del Alamo, S. R. Lerman, P. Bailey, J. Carpenter, K. DeLong, C. Felknor, J. Hardison, B. Harrison, I. Jabbour, P. D. Long, T. Mao, L. Naamani, J. Northridge, M. Schultz, D. Talavera, C. Varadharajan, S. Wang, K. Yehia, R. Zbib, and D. Zych, “The iLab Shared Architecture: A Web Services Infrastructure to Build Communities of Internet Accessible Laboratories.” Invited Paper , Proceedings of IEEE Vol. 96, No. 6, pp. 931-950, June 2008.

RJ-110 Joh, J. and J. A. del Alamo, “Critical Voltage for Electrical Degradation of GaN High Electron Mobility Transistors.” IEEE Electron Device Letters Vol. 29, No. 4, pp. 287-289, April 2008.

RJ-109 Hisaka, T., Y. Nogami, H. Sasaki, N. Yoshida, K. Hayashi, A. A. Villanueva, and J. A. del Alamo, “Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation.” Japanese Journal of Applied Physics, Vol. 47, No. 2, pp. 833-838, 2008.

RC-142 del Alamo, J. A., “CMOS Extension via III-V Compound Semiconductors.” Invited tutorial at Spring Meeting of the Materials Research Society. San Francisco, CA, March, 2008.

RC-150 Kim, D.-H. and J. A. del Alamo, “30 nm E-mode InAs PHEMTs for THz and Future Logic Applications.” 2008 IEEE International Electron Devices Meeting, San Francisco, CA, December 15-17, 2008, pp. 719-722. Also selected for presentation at ISSCC Special Evening Session on Highlights of IEDM. International Solid-State Circuits Conference, San Francisco, CA, February 8-12, 2009.

RC-141 Saunier, P., C. Lee, J. Jimenez, A. Balistreri, H. Dumka, H. Q. Tserng, M. Y. Kao, U. Chowdhury , P. C. Chao, K. Chu, A. Souzis, I. Eliashevich, S. Guo, J. del Alamo, J. Joh, and M. Shur, “Progress in GaN Devices, Performance and Reliability.” SPIE Photonics West Conference, San Jose, CA, Jan. 20-24, 2008.

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RJ-107. Fischer, J. H., Mitchell, R., and J. A. del Alamo, “Inquiry-Learning with WebLab: Undergraduate Attitudes and Experiences.” Journal of Science Education and Technology, 16 (2007).

RJ-108 Kim, D.-H., J. A. del Alamo, J.-H. Lee, and K.-S. Seo, “Logic Suitability of 50 nm In0.7Ga0.3As HEMTs for Beyond-CMOS Applications.” IEEE Transactions on Electron Devices.

RC-133 J. A. del Alamo, “CMOS Extension via III-V Compound Semiconductors.” Short Course on Emerging Nanotechnology and Nanoelectronics at 2007 IEEE International Electron Devices Meeting, Washington, DC, December 10-12, 2007.

RC-134 Villanueva, A., J. A. del Alamo, T. Hisaka, and R. Ishida, “Drain Corrosion in RF Power GaAs PHEMTs.” 2007 IEEE International Electron Devices Meeting, Washington, DC, December 10-12, 2007, pp.

RC-135 Kim, D.-H. and J. A. del Alamo, “Logic Performance of 40 nm InAs HEMTs.” 2007 IEEE International Electron Devices Meeting, Washington, DC, December 10-12, 2007, pp.

RC-136 Joh, J. and J. A. del Alamo, “Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors.” 2007 IEEE International Electron Devices Meeting, Washington, DC, December 10-12, 2007, pp.

RC-137 Waldron, W., D.-H. Kim, and J. A. del Alamo, “90 nm Self-Aligned InGaAs HEMT for Logic Applications.” 2007 IEEE International Electron Devices Meeting, Washington, DC, December 10-12, 2007, pp.

RC-132 Fujishiro, H. I., T. Kawabata and J. A. del Alamo, “Quantum Corrected Monte Carlo Analysis of Scaling Behavior of Nano-Scale InGaAs High Electron Mobility Transistors.” International Symposium on Compound Semiconductors, Kyoto, Japan, October 15-18, 2007.

RC-131 Joh, J. and J. A. del Alamo, “Effects of Temperature on Electrical Degradation of GaN High Electron Mobility Transistors.” 7th International Conference on Nitride Semiconductors, Las Vegas, NV, September 16-21, 2007, pp.

NR-72 del Alamo, J. A., “Electrical Degradation Mechanisms in GaN HEMTs.” Tri-Service Reliability Workshop on GaN Devices, Army Research Laboratory, Adelphi, MD, August 23-24, 2007.

RC-130 Fujishiro, H. I., T. Kawabata and J. A. del Alamo, “Quantum Corrected Monte Carlo Simulation of Nano-Scale InGaAs High Electron Mobility Transistors.” 7th Topical Workshop on Heterostructure Microelectronics, Kirasazu, Chiba, Japan, August 21-24, 2007.

RC-129 del Alamo, J. A., “MIT iLabs: Towards a Community of Internet Accessible Laboratories” Keynote invited paper presented at International Conference on Remote Engineering and Virtual Instrumentation, Porto, Portugal, June 23-24, 2007.

RC-127 Saunier, P, C. Lee, A. Balistreri, D. Dumka, J. Jimenez, H. Q. Tserng, M.Y. Kao, P.C. Chao, K. Chu, A. Souzis, I. Eliashevich, S. Guo, J. del Alamo, J. Joh, and M. Shur, “Progress in GaN Performances and Reliability” Invited paper. 2007 Device Research Conference, University of Notre Dame, South Bend, IN, June 18-20, 2007, pp. 31-32.

RC-128 del Alamo, J. A. and D. H. Kim, “InGaAs CMOS: a “Beyond-the-Roadmap” Logic Technology?” Invited paper presented at 2007 Device Research Conference, University of Notre Dame, South Bend, IN, June 18-20, 2007, pp. 201-202.

RC-126 del Alamo, J. A., “RF Power Suitability of Logic CMOS.” Workshop on Silicon CMOS PA: from RF to mmWave, 2007 Radio Frequency Integrated Circuit Symposium, June 2, 2007.

RC-125 del Alamo, J. A and D.-H. Kim, “Beyond CMOS: Logic Suitability of InGaAs HEMTs.” Invited paper presented at 2007 Indium Phosphide & Related Materials Conference (IPRM), Matsue (Japan), May 14-18, 2007, pp. 51-54.

NR-71 del Alamo, J. A., “III-V CMOS (??!!)”. Invited presentation to Special Session of 2007 Indium Phosphide & Related Materials Conference (IPRM), Matsue (Japan), May 14-18, 2007.

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RC-123 Kim, D.-H. and J. A. del Alamo, “Scaling Behavior of In0.7Ga0.3As HEMTs for Logic.” 2006 IEEE International Electron Devices Meeting, San Francisco, CA, December 11-13, 2006, pp. 837-840.

RC-121 Scholvin, J., D. R. Greenberg, and J. A. del Alamo, “Fundamental Power and Frequency Limits of Deeply-Scaled CMOS for RF Power Applications.” 2006 IEEE International Electron Devices Meeting, San Francisco, CA, December 11-13, 2006, pp. 217-220.

RC-122 Joh, J. and J. A. del Alamo, “Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors.” 2006 IEEE International Electron Devices Meeting, San Francisco, CA, December 11-13, 2006, pp. 415-418.

NR-66 del Alamo, J. A., “MIT iLabs and OCW: Bringing University Innovations Across the Digital Divide” Frontiers of Knowledge University Leaders’ Forum, Cape Town, South Africa, November 18-21, 2006.

RC-120 Jimenez, J. L., U. Chowdhury, M.Y. Kao, A. Balistreri, C. Lee, P. Saunier, P.C. Chao, W.W. Hu, K. Chu, A. Immorlica, J. del Alamo, J. Joh and M. Shur, “Failure Analysis of X-Band GaN FETs.” 2006 Reliability of Compound Semiconducors Workshop (ROCS), San Antonio, TX, November 12, 2006.

NR-64 del Alamo, J. A., R. Mitchell, and J. Fischer, “Working with WebLab: Assessment and the Improvement in Teaching and Learning in an Undergraduate Course at MIT.” NAE/CASEE Dane & Mary Louise Miller Annual Symposium, San Diego, CA, October 27, 2006.

NR-63 del Alamo, J. A., D.-H. Kim and N. Waldron, “Beyond CMOS: Logic Suitability of InGaAs HEMTs,” International III-V CMOS Device Symposium, Portland, OR, September 9, 2006.

RJ-106 Kim, D.-H., J. A. del Alamo, J.-H. Lee, and K.-S. Seo, “Beyond-CMOS: Impact of Side-Recess Spacing on the Logic Performance of 50 nm In0.7Ga0.3As HEMTs” Invited paper to Journal of Semiconductor Technology and Science, 6 (3), 146-153, September 2006.

RC-119 Mitchell, R., J. Fischer, and J. A. del Alamo, “A Survey Study of the Impact of a MIT Microelectronics Online Laboratory on Student Learning.” International Conference on Engineering Education (ICEE), San Juan (Puerto Rico), July 23-28, 2006.

RJ-105. Scholvin, J., J. G. Fiorenza, and J. A. del Alamo, “The Impact of Substrate Surface Potential on the Performance of RF Power LDMOSFETs on High-Resistivity SOI”. IEEE Transactions on Electron Devices 53 (7), 1705-1711, July 2006.

RC-118 Or-Bach, R., K. Livingstone-Vale, J. A. del Alamo, and S. Lerman, “Towards a Collaboration Space for Higher Education Teachers – The Case of MIT iLab Project.” ED-MEDIA, World Conference on Educational Multimedia, Hypermedia & Telecommunications, Orlando, FL, June 26-30, 2006.

RC-117 Inoue, A., H. Amasuga, S. Goto, T. Kunii, M. F. Wong, and J. A. del Alamo, “A Non-Linear Drain Resistance Model for a High Power Millimeter-Wave PHEMT.” IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, June 11-16, 2006, pp. 647-650.

RJ-104. Blanchard, R. J. and J. A. del Alamo, “Stress-Related Hydrogen Degradation of 0.1 ?m InP HEMTs and GaAs PHEMTs.” IEEE Transactions on Electron Devices 53 (6), 1289-1293, June 2006.
(paper)

NR-58 del Alamo, J. A., “MIT iLabs: Towards a Community of Internet Accessible Laboratories,” Microsoft Research Academic Summit Mexico, Guadalajara, Mexico, May 17-19, 2006.

RC-116 Kim, D.-H., J. A. del Alamo, J. H. Lee, and K. S. Seo, “The Impact of Side-Recess Spacing on the Logic Performance of 50 nm In0.7Ga0.3As HEMTs.” 2006 Indium Phosphide & Related Materials Conference (IPRM), Princeton, NJ, May 8-11, 2006, pp. 177-180.

RC-115 Kim, D. H. and J. A. del Alamo, “Beyond CMOS: Logic Suitability of In0.7Ga0.3As HEMT.” 2006 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), Vancouver, BC (Canada), April 24-27, 2006, pp. 251-254.

NR-54. del Alamo J. A., “Prospects of Si CMOS for High-Frequency RF Power Applications.” MIT in Japan: 8th Annual Symposium for Japanese Industry, Tokyo (Japan), January 20, 2006.

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RC-112. J. Scholvin, D. R. Greenberg, and J. A. del Alamo, “Performance and Limitations of 65 nm CMOS for Integrated RF Power Applications.” 2005 IEEE International Electron Devices Meeting, Washington, DC, December, 2005. (viewgraphs)

RC-113. D. H. Kim, J. A. del Alamo, J. H. Lee, and K. S. Seo, “Performance Evaluation of 50 nm In0.7Ga0.3As HEMTs for Beyond-CMOS Logic Applications.” 2005 IEEE International Electron Devices Meeting, Washington, DC, December, 2005. (viewgraphs)

RC-114. Villanueva, A. S., J. A. del Alamo , T. Hisaka, K. Hayashi, and M. Somerville, “Non-Uniform Degradation Behavior Across Device Width in RF Power GaAs PHEMTs.” 2005 IEEE International Electron Devices Meeting, Washington , DC , December, 2005. (viewgraphs)

RC-111 del Alamo, J. A., P. Bailey, J. Hardison, V. Judson Harward, S. R. Lerman, and P. D. Long, “MIT iLabs.” Sloan-C Inernational Conference on Asynchronous Learning Networks, Orlando, Florida, November 17-19, 2005. (viewgraphs)

NR-52. del Alamo, J. A. and S. Lerman, “iLabs: Carrying out Experiments through the Internet Across the Digital Divide,” Learning International Networks Consortium (LINC) Symposium, MIT, October 27-28, 2005. (viewgraphs in PDF)

RC-110. Wong, M. F., J. A. del Alamo, A. Inoue, T. Hisaka and K. Hayashi, “Impact of Drain Recess Length on the RF Power Performance of GaAs PHEMTs”. 6th Topical Workshop on Heterostructure Microelectronics, Awaji Island (Hyogo, Japan), August 22-25, 2005. (abstract) (poster) (viewgraphs)

RJ-103. Waldron, N. S., A. J. Pitera, M. L. Lee, E. A. Fitzgerald, and J. A. del Alamo, “Positive Temperature Coefficient of Impact Ionization in Strained-Si/SiGe Heterostructures”, IEEE Transactions on Electron Devices 52 (7), 1627-1633, July 2005. (paper)

RJ-102. Blanchard, R. R., J. A. del Alamo and A. Cornet, “Hydrogen-Induced Changes in the Breakdown Voltage of InP HEMTs”, IEEE Transactions on Device and Materials Reliability 5 (2), 231-234, June 2005. (paper)

RC-108. del Alamo, J. A., “Si CMOS for RF Power Applications.” Workshop on Advanced Technologies for Next Generation of RFIC, 2005 RFIC Symposium, June 12, 2005. (viewgraphs)

RC-103. Bennett, B. R., T. Suemitsu, N. S. Waldron, and J. A. del Alamo, “Growth of InP HEMTs with Te doping.” 2004 MBE Conference, Edinburg, Scotland, August 22-27, 2004. Also Journal of Crystal Growth vol. 278, Issues 1-4, pp. 596-599, April 2005. (paper)

RC-107. Hardison, J. L., D. Zych, J. A. del Alamo, V. J. Harward, S. R. Lerman, S. M. Wang, K. Yehia and C. Varadharajan. “The Microelectronics WebLab 6.0 – An Implementation Using Web Services and the iLab Shared Architecture.” International Conference on Engineering Education and Research 2005, Tainan, Taiwan, March 1-5, 2005. (abstract) (viewgraphs)

RJ-101. Mertens, S. D. J. A. del Alamo. T. Suemitsu, and T. Enoki, “Hydrogen Sensitivity of InP HEMTs with WSiN-based Gate Stack”, IEEE Transactions on Electron Devices, 52 (3), 305-310, March 2005. (paper)

RJ-100. Fiorenza, J. G. and J. A. del Alamo, “RF Power Performance of an LDMOSFET on High-Resistivity SOI”, IEEE Electron Device Letters, 26 (1), 29-31, January 2005. (paper)

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RC-106 del Alamo, J.A. and A. S. Villanueva, “Thermal, Electrical and Environmental Reliability of InP HEMTs and GaAs PHEMTs.” 2004 IEEE International Electron Devices Meeting, San Francisco, CA, December 13-15, 2004, pp. 1019-1022 (abstract)

RC-105. Scholvin, J., D. R. Greenberg and J. A. del Alamo, “RF Power Potential of 90 nm CMOS: Device Options, Performance, and Reliability.” 2004 IEEE International Electron Devices Meeting, San Francisco, CA, December 13-15, 2004, pp. 455-458. (abstract)

RJ-99. Wu, J. H., J. Scholvin and, J. A. del Alamo, “A Through-Wafer Via Interconnect in Silicon for RFICs”. IEEE Transactions on Electron Devices, 51 (11), 1765-1771, November 2004. (abstract)

NR-45. Harward, J., J. Hardison, V. S. Choudary, K. deLong, S. R. Lerman, and J. A. del Alamo. “The School of Engineering iLab Project,” Ed-Tech Fair, November 2, 2004.

RC-104. Harward, J., J. A. del Alamo, V. S. Choudary, K. deLong, J. L. Hardison, S. R. Lerman, J. Northridge, C. Varadharajan, S. Wang, K. Yehia, and D. Zych. “iLabs: A scalable architecture for sharing online laboratories.” International Conference on Engineering Education 2004, Gainesville, Florida, October 16-21, 2004. (abstract)

RC-103. Bennett, B. R., T. Suemitsu, N. S. Waldron, and J. A. del Alamo, “Growth of InP HEMTs with Te doping.” 2004 MBE Conference, Edinburg, Scotland, August 22-27, 2004.

NR-42. del Alamo, J. A., V. J. Harward, S. R. Lerman and K. Amaratunga, “iLabs: a Web Services Architecture to Bring Labs Online.” 2004 Microsoft Research Faculty Summit , Microsoft, August 1-3, 2004 .

RC-102. Wu, J. H. and J. A. del Alamo, “An equivalent circuit model for a Faraday cage substrate crosstalk isolation structure.” 2004 IEEE RFIC Symposium, Fort Worth, TX, June 6-8, 2004, pp. 635-638 (paper)(poster)

RC-101. Jeppson, K., P. Lundgren, J. A. del Alamo, J. L. Hardison, and D. Zych. “Sharing online remote laboratory resources – a new learning experience.” Net Learning 2004, Ronneby, Sweden, May 10-12, 2004 (viewgraphs)

RC-100. Jeppson, K., P. Lundgren, J. A. del Alamo, J. L. Hardison, and D. Zych. “Sharing online laboratories and their components – a new learning experience.” 5th European Workshop on Microelectronics Education, Lausanne, Switzerland, April 15-16, 2004. (paper) (viewgraphs)

NR-41. del Alamo, J. A. “iLabs: Performing Laboratory Experiments Across Continents,” LINC Workshop, MIT, March 24-25, 2004. (viewgraphs)

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RC-99. Waldron, N. S. and J. A. del Alamo, “Impact Ionization in Strained-Si/SiGe Heterostructures.” 2003 IEEE International Electron Devices Meeting, Washington , DC , December 8-10, 2003 , pp. 813-816. (paper)

RC-93. Villanueva, A. A., J. A. del Alamo, T. Hisaka, and K. Hayashi, “Electrical Reliability of RF Power GaAs PHEMTs.” 2003 IEEE International Electron Devices Meeting, Washington , DC , December 8-10, 2003 , pp. 719-722. (paper)

RC-97. Scholvin, J., J. G. Fiorenza, and J. A. del Alamo, “The Impact of Substrate Inversion on the Performance of RF Power LDMOSFETs on High-Resistivity SOI.” 2003 IEEE International Electron Devices Meeting, Washington , DC , December 8-10, 2003 , pp. 363-366. (paper)

RC-96. Hisaka, T., Y. Nogami, A. Hasuike, H. Sasaki, N. Yoshida, K. Hayashi, T. Sonoda, A. Villanueva and J. A. del Alamo, “Degradation Mechanisms of PHEMTs under Large Signal Operation.” 2003 IEEE GaAs IC Symposium, San Diego, CA, November 9-12, 2003, pp. 67-70. (paper)

NR-39. del Alamo, J. A. “Device Reliability: ‘A Field Where it is Easy to Do Bad Research!’,” 2003 GaAs Reliability Workshop, San Diego (CA), November 9, 2003.

RJ-98. Fiorenza, J. G., J. Scholvin, and J. A. del Alamo, “A Metal-Polysilicon Damascene Gate Technology for RF Power LDMOSFETs”. IEEE Electron Device Letters, 24 (11), 698-700, November 2003. (paper)

NR-37. del Alamo, J. A. “Online Laboratories in Engineering Education: Technology, Pedagogy, Opportunities and Barriers,” UNESCO International Forum on Integration of Science and Education in XXI Century”, Saint Petersburg , Russia , September 7-11, 2003..

NR-40. Jaeger, R., J. A. del Alamo, M. Fukuta, H. S. Bennett, and C. M. Snowden, “Guest editorial: Special section on compound semiconductor microelectronics manufacturing: The future is here.” IEEE Transactions on Semiconductor Manufacturing, vol. 16, no. 3, pp. 354-356, August 2003.

RC-95. del Alamo, J. A., V. Chang, J. Hardison, D. Zych and L. Hui, “An Online Microelectronics Device Characterization Laboratory with a Circuit-like User Interface.” International Conference on Engineering Education 2002, Valencia (Spain), July 2003. (paper)

RC-94. Mertens, S. D., J. A. del Alamo, T. Suemitsu, and T. Enoki, “Hydrogen Sensitivity of InP HEMTs with a thick Ti-layer in the Ti/Pt/Au Gate Stack.” 2003 InP and Related Materials Conference, Santa Barbara , CA , May 2003, pp. 223-226. (paper)

NR-36. del Alamo, J. A. “A Window into the Classroom: Online Laboratories,” Centennial Celebration of EECS, MIT, May 24, 2003.

NR-34. del Alamo, J. A. “The MIT Microelectronics WebLab: an Online Microelectronics Device Characterization Laboratory,” LINC Workshop, MIT, February 6, 2003.

RC-98. Villanueva, A. A., J. A. del Alamo, T. Hisaka, and K. Hayashi, ” Electrical Reliability of RF Power GaAs PHEMTs”. 5th Topical Workshop on Heterostructure Microelectronics, TWHM 2003, Okinawa (Japan), January 21-24, 2003 , pp. 42-43 (paper)

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RJ-97. Mertens, S. D. and J. A. del Alamo, “A model for Hydrogen-induced piezoelectric effect in InP HEMTs and GaAs PHEMTs”, IEEE Transactions on Electron Devices, 49 (11), 1849-1855, November 2002. (paper)

RC-91. del Alamo, J. A., J. Hardison, G. Mishuris, L. Brooks, C. McLean, V. Chang, and L. Hui, “Educational Experiments with an Online Microelectronics Characterization Laboratory.” International Conference on Engineering Education 2002, Manchester (UK), August 2002. (paper)

RC-89. Chang, V, and J. A. del Alamo, “Collaborative WebLab: Enabling Collaboration in an Online Laboratory.” 2002 World Congress on Networked Learning in a Global Environment, Berlin ( Germany ), May 2002.

RC-88. del Alamo, J. A., L. Brooks, C. McLean, J. Hardison, G. Mishuris, V. Chang, and L. Hui, “The MIT Microelectronics WebLab: a Web-Enabled Remote Laboratory for Microelectronics Device Characterization.” 2002 World Congress on Networked Learning in a Global Environment, Berlin (Germany), May 2002. (paper)

RC-90. Mertens, S. D., J. A. del Alamo, T. Suemitsu, and T. Enoki, “Hydrogen Sensitivity of InP HEMTs with WSiN-based Gate Stack.” 2002 InP and Related Materials Conference, Stockholm ( Sweden), May 2002. pp. 323-326. (paper)

RJ-96. Fiorenza, J. G. and J. A. del Alamo, “Experimental Comparison of RF Power LDMOSFETs on Thin-Film SOI and Bulk Silicon”, IEEE Transactions on Electron Devices, 49 (4), 687-692, April 2002. (paper)

RJ-95. Appenzeller, J., R. Martel, Ph. Avouris, J. Knoch, J. Scholvin, J. A. del Alamo, P. Rice, and P. Solomon, “Sub-40nm SOI V-groove n-MOSFETs”, IEEE Electron Device Letters, 23 (2), 100-102, February 2002. (paper)

RC-92. Fiorenza, J. G., J. Scholvin, and J. A. del Alamo, “Technologies for RF Power LDMOSFETs beyond 2 GHz: Metal/poly-Si Damascene Gates and Low-Loss Substrates.” 2002 IEEE International Electron Devices Meeting, San Francisco, CA. December 8-11, pp. 463-466. (paper)

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RJ-94. Somerville, M. H., C. S. Putnam and J. A. del Alamo, “Determining Dominant Breakdown Mechanisms in InP HEMTs”. IEEE Electron Device Letters, 22 (12), 565-567, December 2001. (paper)

RC-87. Mertens, S. D. and J. A. del Alamo, “Electrical Degradation of InAlAs/InGaAs Metamorphic High-Electron Mobility Transistors.” 2001 IEEE International Electron Devices Meeting, Washington , DC , December 2001, pp. 193-196. (paper) (viewsgraph)

RC-81. del Alamo, J. A., R. R. Blanchard, and S. Mertens, “Hydrogen Degradation of InP HEMTs and GaAs PHEMTs.” Invited paper at 2000 Topical Workshop on Heterostructure Microelectronics, Kyoto, Japan, August 2000, pp. 4-5. Published in IEICE Transactions on Electronics, Vol. E84-C, No. 10, pp. 1289-1293, October 2001.

RC-80. Appenzeller, J., R. Martel, J. Knoch, K. Chan, Ph. Avouris, M. Tanner, K. L. Wang, J. A. del Alamo, and P. Solomon, “A 10 nm MOSFET concept,” E-MRS 2000 Spring Meeting, Strasbourg (France), June 2000. Also in Microelectronic Engineering 56, 213-219 (2001).

RJ-93. Wu, J. H., J. Scholvin, J. A. del Alamo and K. A. Jenkins, “A Faraday Cage Isolation Structure for Substrate Crosstalk Suppression”. IEEE Microwave and Wireless Components Letters, 11 (10), 410-412, October 2001. (paper)

RJ-92. Wu, J. H., J. Scholvin, and J. A. del Alamo , “An Insulator-Lined Silicon Substrate-Via Technology with High Aspect Ratio”. IEEE Transactions on Electron Devices, 48 (9), 2181-2183, September 2001. (paper)

RJ-91. Knoch, J., J. Appenzeller, B. Lengeler, R. Martel, P. Solomon, Ph. Avouris, Ch. Dieker, Y. Lu, K. L. Wang, J. Scholvin, and J. A. del Alamo, “Technology for the Fabrication of Ultrashort Channel Metal-Oxide-Semiconductor Field-Effect Transistors”. Journal of Vacuum Science and Technology A, 19 (4), 1737-1741, Jul./Aug. 2001.

RC-86 Appenzeller, J., R. Martel, Ph. Avouris, J. Knoch, Y. Lu, K. L. Wang, J. Scholvin, J. A. del Alamo, and P. Solomon, “Sub-40 nm V-groove MOSFETs.” 59th Annual Device Research Conference, Notre Dame (IN), June 25-27, 2001. (paper)

RC-85. Fiorenza, J. G. and J. A. del Alamo, “RF Power Performance of LDMOSFETs on SOI: an Experimental Comparison with Bulk Si LDMOSFETs.” IEEE MTT-S International Microwave Symposium 2001, Phoenix , AZ , May 2001. (paper)

RC-84. Mertens, S. D. and J. A. del Alamo, “A Model for Hydrogen-Induced Piezoelectric Effect in InP HEMTs and GaAs PHEMTs.” 2001 International Conference on Indium Phosphide and Related Materials, Nara ( Japan ), May 2001, pp. 452-455. (paper)

RJ-90. Fiorenza, J. G., J. A. del Alamo , and D. A. Antoniadis, “RF Power LDMOSFET on SOI,” IEEE Electron Device Letters, 22 (3), 139-141, March 2001. (paper)

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RC-83 Wu, J. H., J. A. del Alamo, and K. Jenkins, “A High Aspect-Ratio Silicon Substrate-Via Technology and Applications: Through-Wafer Interconnects for Power and Ground and Faraday Cages for SOC Isolation.” 2000 IEEE International Electron Devices Meeting, San Francisco, CA, December 2000, pp. 477-480. (paper)

RC-82 Fiorenza, J. G., J. A. del Alamo, and D. A. Antoniadis, “Power Performance of RF SOI LDMOSFETs.” TECHCON 2000, Phoenix, AZ, September 2000. Unpublished.

RJ-89. Blanchard, R. R., A. Cornet, and J. A. del Alamo, “Titanium Hydride Formation in Ti/Pt/Au-Gated InP HEMTs,” IEEE Electron Device Letters, 21 (9), 424-426, September 2000. (paper)

RJ-88. Krupenin, S., R. R. Blanchard, M. H. Somerville, J. A. del Alamo, K. G. Duh, and P. C. Chao, “Physical Mechanisms Limiting the Manufacturing Uniformity of Millimeter-Wave Power InP HEMTs,” IEEE Transactions on Electron Devices, 47 (8), 1560-1565, August 2000. (paper)

RJ-87. Appenzeller, J., R. Martel, P. Solomon, K. Chan, Ph. Avouris, J. Knoch, J. Benedict, M. Tanner, S. Thomas, K. L. Wang, and J. A. del Alamo, “Scheme for the Fabrication of Ultra-Short Channel metal-oxide-semiconductor field-effect transistors,” Applied Physics Letters, 77 (2), 298-300, 10 July 2000.

RJ-86. Somerville, M. H., A. Ernst, and J. A. del Alamo, “A Physical Model for the Kink Effect in InAlAs/InGaAs HEMTs”, IEEE Transactions on Electron Devices, 47 (5), 922-930, May 2000. (paper)

RC-79. Blanchard, R. R., and J. A. del Alamo, “Stress-Related Hydrogen Degradation of 0.1 m m InP HEMTs and GaAs PHEMTs.” 2000 International Conference on Indium Phosphide and Related Materials, Williamsburg , VA , May 2000, pp. 79-82. (paper)

RJ-85. Appenzeller, J., J. A. del Alamo, R. Martel, K. Chan, and P. Solomon, “Ultrathin 600°C Wet Thermal Silicon Dioxide,” Electrochemical and Solid-State Letters, 3 (2), 84-86, February 2000.

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RC-78. Fiorenza, J. G., J. A. del Alamo, and D. A. Antoniadis, “An RF Power LDMOS Device on SOI.” 1999 IEEE International SOI Conference, Rohnert Park , CA , October 1999, pp. 96-97. (paper)

RJ-84. del Alamo, J. A., and M. H. Somerville, “Breakdown in Millimeter-Wave Power InP HEMTs: A Comparison with GaAs PHEMTs,” IEEE Journal of Solid State Circuits, 34 (9), 1204-1211, September 1999. (paper)

RJ-83. Blanchard, R., J. A. del Alamo, S. B. Adams, P. C. Chao, and A. Cornet, “Hydrogen-Induced Piezoelectric Effects in InP HEMTs,” IEEE Electron Devices Letters 20 (8), 393-395, August 1999. (paper)

RJ-82. Somerville, M. H., R. Blanchard, J. A. del Alamo, K. G. Duh, and P. C. Chao, “On-State Breakdown in Power HEMTs: Measurements and Modeling”, IEEE Transactions on Electron Devices 46 (6), 1087-1093, June 1999. (paper)

RC-77. Blanchard, R. R., J. A. del Alamo, and A. Cornet, “Physical Evidence of Hydrogen Degradation of InP HEMTs,” 41st Electronics Materials Conference, Santa Barbara ,CA, June 1999.

RC-72. del Alamo, J. A., M. H. Somerville, and R. R. Blanchard, “Millimeter-Wave InP HEMTs: Challenges and Prospects,” invited paper at 1998 European Gallium Arsenide and Related III-V Compounds Application Symposium, Amsterdam (Holland), October 1998, pp. 187-192. Paper published in Microwave Engineering Europe, pp. 49-52, March 1999.

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RC-76. Blanchard, R., J. A. del Alamo, P. C. Chao, and S. B. Adams, “Hydrogen Degradation in InP HEMTs,” 1998 IEEE International Electron Devices Meeting, San Francisco, CA, December 1998, pp. 231-234. (paper)

RC-75. Somerville, M. H., A. Ernst, and J. A. del Alamo, “A New Dynamic Model for the Kink Effect in InAlAs/InGaAs HEMTs,” 1998 IEEE International Electron Devices Meeting, San Francisco, CA, December 1998, pp. 243-246. (paper)

RC-74. del Alamo, J. A. and M. H. Somerville, “Breakdown in Millimeter-Wave Power InP HEMTs: A Comparison with PHEMTs”, Plenary Session Invited paper at IEEE Gallium Arsenide Integrated Circuits Symposium, Atlanta, GA, November 1998, pp. 7-10. (paper)

RJ-81. Somerville, M. H., R. Blanchard, J. A. del Alamo, K. G. Duh, and P. C. Chao, “A New Gate Current Extraction Technique for Measurement of On-State Breakdown Voltage in HEMTs”, IEEE Electron Device Letters 19 (11), 405-407, November 1998. (paper)

RC-73. Krupenin, S., M. H. Somerville, R. R. Blanchard, J. A. del Alamo, K. G. Duh and P. C. Chao, “Physical Mechanisms Limiting the Manufacturing Yield of Millimeter-Wave Power InP HEMTs”, 1998 European Gallium Arsenide and Related III-IV Compounds Application Symposium, Amsterdam (Holland), October 1998, pp. 533-538.

RJ-80. Somerville, M. H., J. A. del Alamo, and P. Saunier, “Off-State Breakdown in Power pHEMTs: The Impact of the Source”, IEEE Transactions on Electron Devices 45 (9), 1883-1889, September 1998. (paper)

RC-71. del Alamo, J. A., W. T. Lynch and D. A. Antoniadis, “An Analytical Framework for First-Order CMOS Device Design”, invited paper at 1998 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, March 1998, pp. 83-90.

RJ-79. Henderson, R., J. A. del Alamo, T. Becker, J. Lawton, P. Moran, S. Shapiro, and D. Vlasak, “The Perils of Excellence: Barriers to Effective Process Development in the Product Oriented Firm”, Production and Operations Management Journal, 7 (1), 2-18, Spring, 1998.

RJ-78. Ernst, A. N., M. H. Somerville and J. A. del Alamo, “A New Z11 Impedance Technique to Extract Mobility and Sheet Carrier Concentration in HEMTs”, IEEE Transactions on Electron Devices 45 (1), 9-13, January 1998. (paper)

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RC-70. Somerville, M. H., R. Blanchard, J. A. del Alamo, K. G. Duh and P. C. Chao, “On-State Breakdown in High-Power HEMTs: Measurements and Modeling”, 1997 International Electron Devices Meeting, Washington, DC, December 1997, pp. 553-556. (paper)

RC-69. Ernst, A. N., M. H. Somerville, and J. A. del Alamo, “Dynamics of the Kink Effect in InAlAs/InGaAs HEMTs”, Ninth International Conference on Indium Phosphide and Related Materials, Hyannis, MA, May 1997, pp. 353-356. (paper)

RC-68. Putnam, C. S., M. H. Somerville, J. A. del Alamo, P. C. Chao and K. G. Duh, “Temperature Dependence of Breakdown Voltage in InAlAs/InGaAs HEMTs: Theory and Experiments”, Ninth International Conference on Indium Phosphide and Related Materials, Hyannis, MA, May 1997, pp. 197-200. (paper)

RJ-77. Ernst, A., M. H. Somerville and J. A. del Alamo, “Dynamics of the Kink Effect in InA1As/InGaAs HEMTs”, IEEE Electron Device Letters 18 (12), 613-615, 1997. (paper)

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RC-67. Somerville, M. H., and J. A. del Alamo “A Model for Tunneling-Limited Breakdown in High-Power HEMTs”, 1996 International Electron Devices Meeting, San Francisco, CA, December 1996, pp. 35-38. (paper)

RJ-73. Greenberg, D.R. and J. A. del Alamo, “Nonlinear Source and Drain Resistance in Recessed-Gate Heterostructure Field-Effect Transistors”, IEEE Transactions on Electron Devices 43 (8), 1304-1306, August 1996. (paper)

RJ-76. Hu, Q., S. Verghese, R. A. Wyss, Th. Schapers, J. A. del Alamo, S. Feng, K. Yakubo, M. J. Rooks, M. R. Melloch and A. Forster, “High-frequency (f ~ 1 Thz) Studies of Quantum-effect Devices”, Semiconductor Science and Technology 11, 1888-1894, 1996.

RJ-75. Somerville, M. H., J. A. del Alamo and W. Hoke, “Direct Correlation Between Impact and the Kink Effect in InA1As/InGaAs HEMTs”, IEEE Electron Device Letters 17 (10), 473-475, October 1996. (paper)

RJ-74. Sinn, M. T., J. A. del Alamo, B. R. Bennett, K Haberman and F. G. Celii, “Characterization of Surface Roughness Anisotrophy on Mismatched InA1As/InP Heterostructures”, Journal of Electronic Materials 25 (2), 313-319, 1996.

RC-66. Somerville, M. H., J. A. del Alamo and P. Saunier, “Off-State Breakdown in Power pHEMTs: The Impact of the Source”, 54th Device Research Conference, Santa Barbara, CA, June 1996. (paper)

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RJ-68. Bahl, S.R., J. A. del Alamo, J. Dickmann, and S. Schildberg , “Off-State Breakdown in InAlAs/InGaAs MODFETs”, IEEE Transactions on Electron Devices 42 , 15-22, January 1995. (paper)

RJ-69. Berthold, S., E. Zanoni, C. Canali, M. Pavesi, M. Pecchini, M. Manfredi, S.R. Bahl, and J. A. del Alamo, “Impact Ionization and Light Emission in InAlAs/InGaAs Heterostructure Field-Effect Transistors”, IEEE Transactions on Electron Devices 42 (4), 752-759, April 1995. (paper)

RJ-70. Wyss, R.A., C.C. Eugster, J. A. del Alamo, M.J. Rooks, M.R. Melloch, and Q. Hu, “Far-Infrared Radiation-Induced Thermopower in a Quantum Point Contact”, Applied Physics Letters 66 (9), 1144-1146, February 1995.

RJ-71. Greenberg, D.R., J. A. del Alamo, and R. Bhat, “Impact Ionization and Transport in the InAlAs/n + -InP HFET”, IEEE Transactions on Electron Devices 42 (9), 1574-1582, September 1995. (paper)

RJ-72. Burstein, L., Y. Shapira, B.R. Bennett, and J. A. del Alamo, “Surface Photovoltage Spectroscopy of In x Al 1-x As Epilayers”, Journal of Applied Physics 78 (12), 7163-7169, December 1995.

RC-62. del Alamo, J. A. and C.C. Eugster, “Dual Electron Waveguide Devices: the Quest for Electron Directional Coupling”, (invited) International Workshop on Mesoscopic Physics and Electronics, Tokyo, Japan, March 1995; Japanese Journal of Applied Physics 34 (Part 1, No. 8B), 4439-4445, August 1995.

RC-63. del Alamo, J. A., C.C. Eugster, Q. Hu, M.R. Melloch, and M.J. Rooks, “Electron Waveguide Devices”, invited paper to 8th International Conference on Superlattices, Microstructures, and Microdevices, Cincinnati, OH, August 1995; Superlattices and Microstructures 23 (1), 121-137, 1998.

RC-64. Hu, Q., S. Vergese, R. A. Wyss, Th. Schapers, J. A. del Alamo, S. Feng, K. Kubo, M. J. Rooks, M. R. Melloch and A. Forster, “High-frequency (f ~ 1 Thz) Studies of Quantum-effect Devices”, (invited) 1995 International Electron Devices Research Symposium, Charlottesville, VA, December 1995, pp. 337-341.

RC-65. Somerville, M. H., J. A. del Alamo and W. Hoke, “A New Physical Model for the Kink Effect on InAlAs/InGaAs HEMTs”, 1995 International Electron Devices Meeting, Washington DC , December 1995, pp. 201-204. (paper)

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RJ-67. Gan, C., J. A. del Alamo, B.R. Bennett, B.S. Meyerson, E.F. Crabbé, C.G. Sodini, and L.R. Reif, Si1-xGex Valence Band Discontinuity Measurements Using a Semiconductor-Insulator-Semiconductor (SIS) Heterostructure”, IEEE Transactions on Electron Devices 41, 2430-2439, December 1994. (paper)

RJ-66. Bahl, S.R. and J. A. del Alamo, “Physics of Breakdown in InAlAs/n+-InGaAs Heterostructure Field-Effect Transistors”, IEEE Transactions on Electron Devices 41, 2268-2275, December 1994. (paper)

RC-60. Berthold, G., M. Mastrapasqua, C. Canali, M. Manfredi, E. Zanoni, S.R. Bahl, and J. A. del Alamo, “Electron and Hole Real Space Transfer in InAlAs/InGaAs Heterostructure Device”, 24th European Solid State Device Research Conference, September 1994, Edinburgh, UK; published in Conference Proceedings, C. Hill and P. Ashburn, Eds., Editions Frontieres, p. 631-634.

RJ-64. Moolji, A.A., S.R. Bahl, and J. A. del Alamo, “Impact Ionization in InAlAs/InGaAs HFETs”, IEEE Electron Device Letters 15, 313-315, August 1994. (paper)

RJ-65. Greenberg, D.R. and J. A. del Alamo, “Velocity Saturation in the Extrinsic Device: A Fundamental Limit to HFET’s”, IEEE Transactions on Electron Devices 41 (8), 1334-1339, August 1994. (paper)

RC-59. Berthold, G., E. Zanoni, M. Manfredi, M. Pavesi, C. Canali, J. A. del Alamo, and S.R. Bahl, “Electroluminescence and Gate Current Components of InAlAs/InGaAs HFETs”, 52nd Annual Device Research Conference, Boulder, CO, June 1994. (paper)

RJ-62. Eugster, C.C., J. A. del Alamo, M.J. Rooks, and M.R. Melloch, “1D to 1D Tunneling Between Electron Waveguides”, Applied Physics Letters 64, 3157-3159, June 1994. (paper)

RJ-63. Somerville, M.H., D.R. Greenberg, and J. A. del Alamo, “Temperature and Carrier Concentration Dependence of Mobility in a Heavily-Doped Quantum Well”, Applied Physics Letters 64, 3276-3278, June 1994. (paper)

RJ-61. Bennett, B.R., J. A. del Alamo, M.T. Sinn, F. Peiró, A. Cornet, and D.E. Aspnes, “Origin of Optical Anisotropy in Strained InxGa1-xAs/InP and InxAl1-xAs/InP Heterostructures”, Journal of Electronic Materials 23, 423-429, April 1994.

RC-58. Greenberg, D.R., J. A. del Alamo and R. Bhat, “A Submicron InAlAs/n+-InP HFET with Reduced Impact Ionization”, Sixth International Conference on Indium Phosphide and Related Materials, Santa Barbara, CA, March 1994, p. 407-410. (paper)

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RC-61. Wyss, R.A., C.C. Eugster, J. A. del Alamo, M.J. Rooks, M.R. Melloch, and Q. Hu, “Far-infrared Study of an Antenna-Coupled Quantum Point Contact”, International Semiconductor Device Research Symposium, Charlottesville, VA, December 1993, p. 667.

RJ-60. Eugster, C.C., J. A. del Alamo, M.R. Melloch, and M.J. Rooks, “1D to 2D Tunneling in Electron Waveguides”, Physical Review B 48, 15057-15067, November 1993.

RJ-59. Eugster, C.C., P.R. Nuytkens, and J. A. del Alamo, “A Novel Analog-to-Digital Conversion Architecture Using Electron Waveguides”, IEEE Transactions on Electron Devices 40, 1910-1916, November 1993. (paper)

RJ-58. Wyss, R.A., C.C. Eugster, J. A. del Alamo, and Q. Hu, “Far-Infrared Photon-Induced Current in a Quantum Point Contact”, Applied Physics Letters 63, 1522-1524, September 1993.

RC-57. Hu, Q., R.A. Wyss, C.C. Eugster, J. A. del Alamo, and S. Feng, “Far-Infrared Study of an Antenna-Coupled Quantum Point Contact”, NATO Advanced Research Workshop on Quantum Well Intersubband Transition Physics and Devices, Whistler, Canada, September 1993, p. 553.

RC-56. Dickmann, J., S. Schildberg, H. Dämbkes, S.R. Bahl, and J. A. del Alamo, “Characterization of the Breakdown Behavior of Pseudomorphic InAlAs/InxGa1-xAs/InP HEMTs with High Breakdown Voltages”, 20th International Symposium on Gallium Arsenide and Related Compounds, Freiburg, Germany, August 1993; Institute of Physics Conference Series 137, 1994, 65-70.

RJ-57. Bennett, B.R. and J. A. del Alamo, “Thermal Stability of Strained In x Ga 1-x As/In x Al 1-x As /InP Heterostructures”, Applied Physics Letters 63 , 1122-1124, August 1993. (paper)

RJ-56. Bahl, S.R. and J. A. del Alamo, “A New Drain-Current Injection Technique for the Measurement of Breakdown Voltage in FETs”, IEEE Transactions on Electron Devices 40 (8), 1558-1560, August 1993. (paper)

RJ-55. Bennett, B.R. and J. A. del Alamo, “Optimal Epilayer Thickness for InxGa1-xAs and InxAl1-xAs Composition Measurement by High-Resolution X-ray Diffraction”, Journal of Applied Physics 73, 8304-8308, June 1993.

RC-55. Bennett, B.R., J. A. del Alamo, F. Peiró, A. Cornet, D.E. Aspnes, “Origin of Optical Anisotropy in Strained InxGa1-xAs/InP and InxAl1-xAs/InP Heterostructures”, 35th Electronic Materials Conference, Santa Barbara, CA, June 1993.

RC-54. De Boeck, J., W. Van Roy, A. Van Esch, H. Bender, G. Borghs, P. Van Mieghem, R. O’Handley, B.R. Bennett, J. A. del Alamo, M. Tanaka, J.P. Harbison, T. Cheeks, and T.D. Sands, “Growth Parameter Dependent Magnetic Properties and Curie Temperature of Ferromagnetic Epitaxial ?-MnAl on GaAs”, 35th Electronic Materials Conference, Santa Barbara, CA, June 1993.

RC-53. Bahl, S.R., J. A. del Alamo, J. Dickmann, and S. Schildberg, “Physics of Breakdown in InAlAs/InGaAs MODFETs”, 51st Annual Device Research Conference, Santa Barbara, CA, June 1993; abstract in IEEE Transactions on Electron Devices 40, 2110-2111, 1993. (paper)

RC-52. Eugster, C.C., J. A. del Alamo, M.R. Melloch, and M.J. Rooks, “1D to 1D Tunneling in a Dual Electron Waveguide Device”, 51st Annual Device Research Conference, Santa Barbara, CA, June 1993; abstract in IEEE Transactions on Electron Devices 40, 2135-2136, 1993. (paper)

RC-50. Dumas, J.M., P. Audren, M.P. Favennec, D. Lecrosnier, S.R. Bahl, and J. A. del Alamo, “An Investigation of Deep Levels in AnAlAs/n+-InGaAs Heterostructure FETs”, Fifth International Conference on Indium Phosphide and Related Materials, Paris, France, April 1993, pp. 255-258. (paper)

RC-49. Bahl, S.R. and J. A. del Alamo, “Physics of Breakdown in InAlAs/n+-InGaAs HFETs”, Fifth International Conference on Indium Phosphide and Related Materials, Paris, France, April 1993, pp. 243-246. (paper)

RC-48. Nuytkens, P.R., D.R. Greenberg, J. A. del Alamo, and E.J. Balboni, “A Monolithic Tunable High-Q InAlAs/n+-InP HFET Resonator”, Fifth International Conference on Indium Phosphide and Related Materials, Paris, France, April 1993, pp. 389-392. (paper)

RC-47. Bennett, B.R. and J. A. del Alamo, “Thermal Stability of Pseudomorphic InxGa1-xAs/InyAl1-yAs/InP Heterostructures”, Fifth International Conference on Indium Phosphide and Related Materials, Paris, France, April 1993, pp. 455-458. (paper)

RJ-54. Bennett, B.R. and J. A. del Alamo, “Mismatched InGaAs/InP and InAlAs/InP Heterostructures with High Crystalline Quality”, Journal of Applied Physics, 73, 3195-3202, April 1993.

RC-51. Hu, Q., R.A. Wyss, C.C. Eugster, J. A. del Alamo, S. Feng, M.J. Rooks, and M.R. Melloch, “A Novel Submillimeter-Wave Detector Using Quantum Point Contacts”, Fourth International Symposium on Space Terahertz Technology, Los Angeles, CA, March 1993, p. 605-617.

RC-46. del Alamo, J. A. and C.C. Eugster, “Electron Waveguide Devices”, (invited) International Workshop on GaAs Electronics: Towards Zero Dimensional Structures, Rome, Italy, February 1993; Alta Frequenza 5, 194-198, 1993.

RJ-53. Greenberg, D.R. and J. A. del Alamo, “The Impact of Electron Transport Regimes on the Linearity of AlGaAs/n+-InGaAs HFETs”, Solid-State Electronics 36, 53-60, January 1993.

RJ-52. Bahl, S.R., B.R. Bennett, and J. A. del Alamo, “Doubly-Strained In0.41Al0.59As/n+-In0.65Ga0.35As HFET with High Breakdown Voltage”, IEEE Electron Device Letters 14, 22-24, January 1993. (paper)

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RC-45. Eugster, C.C., P.R. Nuytkens, and J. A. del Alamo, “A Novel Analog-to-Digital Conversion Architecture Using Electron Waveguides”, 1992 International Electron Devices Meeting, San Francisco, CA, December 1992, p. 495. (paper)

RC-44. del Alamo, J. A. and C.C. Eugster, “Electron Waveguide Devices”, (invited) 19th International Symposium on Gallium Arsenide and Related Compounds, Karuizawa, Japan, September 1992; in Institute of Physics Conference Series 129, 287-292, 1993.

RC-43. Eugster, C.C., J. A. del Alamo, M.R. Melloch, and M.J. Rooks, “Effects of Single Impurity Scattering on One-Dimensional Quantum-Effect Devices”, 50th Annual Device Research Conference, Cambridge, MA, June 1992; abstract published in IEEE Transactions on Electron Devices 39, 2642-2643, November 1992. (paper)

RC-42. Chu, W., C.C. Eugster, A. Moel, E.E. Moon, J. A. del Alamo, H.I. Smith, M.L. Schattenburg, K.W. Rhee, M.C. Peckerar, and M.R. Melloch, “Observation of Conductance Quantization in a GaAs Electron Waveguide Device Fabricated by Contact X-Ray Lithography”, 36th International Symposium on Electron, Ion, and Photon Beams, Orlando, FL, May 1992; in Journal of Vacuum Science and Technology B 10, 2966, November-December 1992.

RJ-51. Eugster, C.C., J. A. del Alamo, M.R. Melloch, and M.J. Rooks, “The Effects of Single Scatterers on Transport and Tunneling in a Dual Electron Waveguide Device”, Physical Review B, 46, 10146-10151, October 1992. (paper)

RJ-50. Bahl, S.R., M.H. Leary, and J. A. del Alamo, “Mesa-Sidewall Gate-Leakage in InAlAs/InGaAs Heterostructure Field-Effect Transistors”, IEEE Transactions on Electron Devices 39, 2037-2043, September 1992. (paper)

RJ-48. Bahl, S.R. and J. A. del Alamo, “Elimination of Mesa-Sidewall Gate-Leakage in InAlAs/InGaAs Heterostructures by Selective Sidewall Recessing”, IEEE Electron Device Letters, 13, 195, April 1992.

RJ-49. del Alamo, J. A., “GaAs Integrated Circuit Manufacturing”, MRS Bulletin 17, 42-44, April 1992.

RC-41. Bennett, B.R. and J. A. del Alamo, “High Quality InGaAs/InP and InAlAs/InP Heterostructures Beyond the Matthews-Blakeslee Critical Layer Thickness”, 4th International Conference on InP and Related Materials, Newport, RI, April 1992, p. 650. (paper)

RC-40. Bahl, S.R., B.R. Bennett, and J. A. del Alamo, “A High-Voltage, Doubly-Strained In0.42A10.59As/n+-In0.65Ga0.35As HFET”, 4th International Conference on InP and Related Materials, Newport, RI, April 1992, p. 222. (paper)

RJ-47. Greenberg, D.R., J. A. del Alamo, and R. Bhat, “A Recessed-Gate InAlAs/n+-InP HFET with an InP Etch-Stop Layer”, IEEE Electron Device Letters, 13, 137, March 1992. (paper)

RJ-45. Bahl, S.R. and J. A. del Alamo, “Breakdown Voltage Enhancement from Channel Quantization in InAlAs/n-InGaAs Heterostructure Field-Effect Transistors”, IEEE Electron Device Letters 13, 123, February 1992. (paper)

RJ-46. Eugster, C.C., J. A. del Alamo, M.J. Rooks, and M.R. Melloch, “Split-Gate Dual Electron Waveguide Device”, Applied Physics Letters 60, 642, February 1992.

RC-39. del Alamo, J. A. and C.C. Eugster, “Tunneling Spectroscopy of a Leaky Electron Waveguide”, International Workshop on Quantum-Effect Physics, Electronics and Applications, Luxor, Egypt, January 1992; in Institute of Physics Conference Series 127, p. 225.

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RC-38. Greenberg, D. R., and J. A. del Alamo, “Impact of the Extrinsic Device on HFET Performance”, 1991 Fall Meeting, Materials Research Society, Symposium E: Advanced III-V Compound Semiconductor Growth, Processing and Devices, Boston, MA (USA), December 1991, p. 585.

RJ-41. Eugster, C.C., T.P.E. Broekaert, J. A. del Alamo, and C.G. Fonstad, “An InAlAs/InAs MODFET”, IEEE Electron Device Letters 12, 707, December 1991. (paper)

RJ-42. Eugster, C.C. and J. A. del Alamo, “Tunneling Spectroscopy of an Electron Waveguide, “Physical Review Letters 67, 3586, December 1991.

RJ-43. Bennett, B.R. and J. A. del Alamo, “Orthorhombic Distortion of Mismatched InxGa1-xAs Heterostructures”, Journal of Electronic Materials 20, 1075, December 1991.

RC-37. Bennett, B. R., and J. A. del Alamo, “Relaxation of Mismatched InxAl1-xAs/InP Heterostructures”, 1991 Fall Meeting, Materials Research Society, Symposium E: Advanced III-V Compound Semiconductor Growth, Processing and Devices, Boston, MA (USA), December 1991. p. 153.

RJ-44. Rooks, M. J., C. C. Eugster, J. A. del Alamo, G. Snider, and E. Hu, “Split Gate Electron Waveguide Fabrication Using Multilayer PMMA”, in Journal of Vacuum Science and Technology B 9, 2856, November/December 1991.

RJ-40. Moran, P. W., S. Elliott, N. Wylie, R. M. Henderson, and J. A. del Alamo, “A Process Control Methodology Applied to Manufacturing GaAs MMICs”, IEEE Transactions on Semiconductor Manufacturing 4, 304, November 1991. (paper)

RJ-39. Bahl, S.R., W.J. Azzam, and J. A. del Alamo, “Strained-Insulator InxAl1-xAs/N+-In0.53Ga0.47As Heterostructure Field-Effect Transistors”, IEEE Transactions on Electron Devices 38, 9, 1986-1992, September 1991. (paper)

RC-36. Bahl, S. R., and J. A. del Alamo, “Elimination of Mesa-Sidewall Gate Leakage in InalAs/InGaAs HFETs by Selective Sidewall Recessing”, 18th International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington (USA), September 1991, p. 207.

RC-35. Eugster, C. C., and J. A. del Alamo, “Planar Coupled Electron Waveguides”, 38th Scottish Universities Summer School in Physics on Physics of Nanostructures, August 1991; Physics of Nanostructures, J.H. Davies and A.R. Long, eds., IOP Publishing, 1992, p. 309.

RJ-38. Greenberg, D. R., J. A. del Alamo, J. P. Harbison, and L. T. Florez, “A Pseudomorphic AlGaAs/n+-InGaAs Metal-Insulator-Doped Channel FET for Broadband, Large-Signal Applications”, IEEE Electron Device Letters 12 (8), 436-438, August 1991. (paper)

RJ-37. Bennett, B. R. and J. A. del Alamo, “Optical Anisotropy in Mismatched InGaAs/InP Heterostructures”, Applied Physics Letters 58, (25), 2978-2980, June 24, 1991.

RJ-36. Eugster, C. C., J. A. del Alamo, P. A. Belk, and M. J. Rooks, “Criteria for the Observation of One-Dimensional Transport in Split-Gate Field-Effect Quantum Wires”, Applied Physics Letters 58, (25), 2966-2968, June 24, 1991.

RC-34. Eugster, C. C., J. A. del Alamo, and M. J. Rooks, “Planar Field-Effect Coupled Quantum Wires”, 49th Annual Device Research Conference, Boulder, Colorado (USA), June 17-19, 1991; abstract in IEEE Transaction on Electron Devices 38, 2715, November 1991. (paper)

RC-33. Rooks, M. J., C. C. Eugster, J. A. del Alamo, G. Snider, and E. Hu, “Split-Gate Electron Waveguide Fabrication Using Multilayer PMMA”, 1991 International Symposium on Electron, Ion, and Photon Beams, Seattle, Washington (USA), May 1991; in Journal of Vacuum Science and Technology B 9, 2856, November/December 1991.34. Eugster, C. C., J. A. del Alamo, and M. J. Rooks, “Planar Field-Effect Coupled Quantum Wires”, 49th Annual Device Research Conference, Boulder, Colorado (USA), June 17-19, 1991; abstract in IEEE Transaction on Electron Devices 38, 2715, November 1991.

RC-32. Greenberg, D. R., J. A. del Alamo, J. P. Harbison, and L. T. Florez, “The Physics of Scaling of Pseudomorphic AlGaAs/n+-InGaAs Heterostructure Field-Effect Transistors”, State-of-the-Art Program on Compound Semiconductors, SOTAPOCS XIV, 179th Electrochemical Society Meeting, Washington, DC. (USA) May 5-10, 1991.

RC-31. Bennett, B. R., and J. A. del Alamo, “Orthorhombic Distortion of Mismatched InxGa1-xAs Heterostructures”, 3rd International Conference on Indium Phosphide and Related Materials, Cardiff, (Wales, UK), April 8-10, 1991, p. 335. (paper)

RC-30. Eugster, C. C., T. P. Broekaert, J. A. del Alamo, and C. G. Fonstad, “An InAlAs/InAs MODFET”, 3rd International Conference on Indium Phosphide and Related Materials, Cardiff, (Wales, UK), April 8-10, 1991, p. 335. (paper)

RJ-35. Bahl, S.R., W. J. Azzam, and J. A. del Alamo, “Orientation Dependence of Mismatched InxAl1-xAs/In0.53Ga0.47As HFETs”, Journal of Crystal Growth, 111, 479, 1991.

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RJ-34. Eugster, C.C., J. A. del Alamo, and M. J. Rooks, “Transport in Novel Gated Quantum Wires: The Impact of Wire Length”, Japanese Journal of Applied Physics Letters 29, L2257, December 1990.

RC-29. Eugster, C. C., J. A. del Alamo, P. A. Belk, and M. J. Rooks, “Criteria for One-Dimensional Transport in Split-Gate Field-Effect Transistors”, 1990 International Electron Device Meeting, San Francisco, CA, December 1990, p. 335. (paper)

RC-28. Bahl, S. R. and J. A. del Alamo, “A Quantized-Channel In0.52A10.48As/n+-In0.53Ga0.47As HFET with a High Breakdown Voltage”, 1990 Fall Meeting of the Materials Research Society, Boston, MA, November 1990 Vol. EA-21, p. 117.

RC-27. Rooks, M. J., G. Snider, E. Hu, C. C. Eugster, and J. A. del Alamo, “GaAs Split-Gate Fabrication for 20nm Patterns on Rough Substrates Using Multilayer PMMA”, 1990 Fall Meeting of the Materials Research Society, Boston, MA, November 1990 Vol. EA-26, p. 51.

RC-26. Moran, P. W., S. Elliott, N. Wylie, R. Henderson, and J. A. del Alamo, “A Process Control Methodology Applied to Sub-Micron Gate Lithography in Manufacturing GaAs MMICs”, 1990 International Electronics Manufacturing Technology Symposium, October 1990, p. 128. (paper)

RJ-33. Azzam, W.J. and J. A. del Alamo, “An All-Electrical Floating-Gate Transmission Line Model Technique for Measuring Source Resistance in Heterostructure Field-Effect Transistors”, IEEE Transaction of Electronic Devices 37, 2105, September 1990. (paper)

RC-25. Moran, P. W., J. A. del Alamo, N. Wylie, R. Henderson, and S. Elliot, “Controlling Variability of Sub-micron Gate Lithography in a GaAs MMIC Manufacturing Environment”, Advanced Semiconductor Manufacturing Conference and Workshop, Danvers, MA, September 1990, p. 136A.

RC-24. Bahl, S. R., W. J. Azzam, and J. A. del Alamo, “Orientation Dependence of Mismatched InxAl1-qxAs/In0.47Ga 0.53As HFETs”, 6th International Conference on Molecular Beam Epitaxy, San Diego, CA, August 1990; in the Journal of Crystal Growth, 14, 479, 1991.

RC-23. Eugster, C.C., J. A. del Alamo, and M. J. Rooks, “Ballistic Transport in a Novel Gated Quantum Wire”, 48th Device Research Conference, Santa Barbara, CA, June 1990; abstract published in IEEE Transaction on Electron Devices.

RC-22. Bahl, S. R., and del Alamo, J. A., “An In0.52A10.48As/n+-InxGa1-xAs Heterostructure Field-Effect Transistor with an In-Enriched Channel”, 2nd International Conference on Indium Phosphide and Related Materials, Denver, CO, April 1990, pp. 100-103. (paper)

RJ-32. del Alamo, J. A., and C.C. Eugster, “Quantum Field-Effect Directional Coupler”, Applied Physics Letters 56, 78, January 1, 1990.

RJ-31. Bennett, B.R., R.A. Soref, and J. A. del Alamo, “Carrier-Induced Change in Refractive Index of InP, GaAs, and InGaAsP”, IEEE Journal of Quantum Electronics 26, 113, January 1990. (paper)

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RC-21. Bennett, R., and J. A. del Alamo, “Index of Refraction Anisotropy in Mismatched InGaAs/InP Heterostructures Measured by Ellipsometry”, Fall 1989 Materials Research Society Meeting, vol. 160, Boston, MA, November 1989, pp. 713-718.

RJ-30. del Alamo, J. A., and W. Azzam, “A Floating-Gate Transmission Line-Model (FGTLM) Technique for Measuring Source Resistance in Heterostructures Field-Effect Transistors”, IEEE Transactions on Electron Devices 36, 2386, November, 1989. (paper)

RJ-29. del Alamo, J. A., and T. Mizutani, “An In0.52Al0.48As/n+- In0.53Ga0.47As MISFET with a Modulation-Doped Channel, “IEEE Electron Device Letters EDL-10, 394, August 1989. (paper)

RJ-28. del Alamo, J. A., and T. Mizutani, “A Recessed Gate In0.52Al0.49As/n+- In0.53Ga0.47As MIS-type FET”, IEEE Transactions on Electron Devices, ED-36, 646, April 1989. (paper)

RJ-27. del Alamo, J. A., and T. Mizutani, “Bias Dependence of fT and fmax in an In0.52Al0.48As/n+- In0.53Ga0.47As MISFET”, IEEE Electron Device Letters EDL-9, 654, December 1988.

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RC-19. del Alamo, J. A., and T. Mizutani, “An InAlAs/n+-InGaAs MISFET with a Modulation-Doped Channel”, 46th Annual Device Research Conference, Boulder, CO, June 1988; abstract published in IEEE Transactions on Electron Devices ED-35, 2441, December 1988.

RC-20. del Alamo, J. A., and T. Mizutani, “A Recessed-gate InAlAs/n+-InGaAs MISFET”, Fall 1988 Materials Research Society Meeting, Vol. 144, Boston, MA, November 1988, p. 659

RJ-26. del Alamo, J. A., and T. Mizutani, “AuGeNi Ohmic Contacts to InP for FET Applications”, Solid-State Electronics 31, 1635, November 1988.

RJ-25. Wagner, J. and J. A. del Alamo, “Band Gap Narrowing in Heavily Doped Silicon: A Comparison of Optical and Electrical Data”, Journal of Applied Physics 63, 425, January 1988.

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RJ-24. del Alamo, J. A., and T. Mizutani, “An In0.52Al0.48As/n+- In0.53Ga0.47As MISFET with a Heavily-Doped Channel”, IEEE Electron Device Letters EDL-8, 534, November 1987. (paper)

RJ-23. del Alamo, J. A., and R. M. Swanson, “Minority Carrier Transport in Heavily Doped Silicon: Fundamental Equations”, Japanese Journal of Applied Physics (Part 1) 26, 1860, November 1987.

RJ-22. del Alamo, J. A., and R. M. Swanson, “Modeling of Minority Carrier Transport in Heavily Doped Silicon Emitters”, Solid-State Electronics 30, 1127, November 1987.

RJ-21. del Alamo, J. A., and T. Mizutani, “Rapid Thermal Annealing of InP Using GaAs and InP Proximity Caps”, Journal of Applied Physics 62, 3456, October 1987.

RJ-20. del Alamo, J. A., and R. M. Swanson, “Measurement of Steady-State Minority Carrier Transport Parameters in Heavily Doped n-Type Silicon”, IEEE Transactions on Electron Devices ED-34, 1580, July 1987. (paper)

RJ-19. del Alamo, J. A., and T. Mizutani, “A Self-Aligned Enhancement-Mode AlGaAs/InP MISFET”, IEEE Electron Device Letters EDL-8, 220, May 1987. (paper)

RJ-18. del Alamo, J. A., and R. M. Swanson, “Validity of the Quasi-Transparent Model of the Current Injected into Heavily Doped Emitters of Bipolar Devices”, IEEE Transactions on Electron Devices ED-34, 455, February 1987. (paper)

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RC-18. Crabbé, E. F., S. Swirhun, J. A. del Alamo, R.F.W. Pease, and R. M. Swanson, “Majority and Minority Carrier Transport in Polysilicon-Emitter Contacts”, International Electron Device Meeting, Los Angeles, CA, December 1986, p. 28; also in Polysilicon-Emitter Bipolar Transistors, A.K. Kapoor and D. J. Roulston (eds.), IEEE Press, 1989, p. 100. (paper)

RC-16. Crabbé, E. F., J. A. del Alamo, R.F.W. Pease, and R. M. Swanson, “A Novel Polysilicon-Collector Bipolar Transistor for the Study of Polysilicon-Emitter Interface Physics”, 44th Annual Device Research Conference, Amherst, MA, June 1986; abstract published in IEEE Transactions on Electron Devices ED-33, 1853, November 1986.

RJ-17. del Alamo, J. A., and R. M. Swanson, “Forward-Bias Tunneling: A Limitation to Bipolar Device Scaling”, IEEE Electron Device Letters EDL-7, 629, November 1986. (paper)

RC-17. del Alamo, J. A., and R. M. Swanson, “Forward-Bias Tunneling Current Limits in Scaled Bipolar Devices”, 18th International Conference on Solid State Devices and Materials, Tokyo, Japan, August 1986, p. 283. (paper)

RJ-16. Swirhun, S. E., J. A. del Alamo, and R. M. Swanson, “Measurement of Hole Mobility in Heavily Doped n-type Silicon”, IEEE Electron Device Letters EDL-7, 168, March 1986. (paper)

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RJ-15. del Alamo, J. A., and R. M. Swanson, “Fabrication and Characterization of Epitaxial Heavily Phosphorus-Doped Silicon”, Journal of the Electrochemical Society 132, 3011, December 1985.

RC-14. del Alamo, J. A., S. Swirhun and R. M. Swanson, “Simultaneous Measurement of Hole Lifetime, Hole Mobility, and Bandgap Narrowing in Heavily Doped n-type Silicon”, International Electron Device Meeting, Washington, DC, December 1985, p. 290. (paper)

RC-15. del Alamo, J. A., and R. M. Swanson, “Modeling of Minority Carrier Transport in Heavily Doped Silicon Emitters”, (Invited), U.S. Belgium Joint Seminar on New Developments in the Physics of Homo- and Heterojunctions, Leuven, Belgium, May 1986, in Solid-State Electronics 30, 1127, November 1987.

RC-12. del Alamo, J. A., and R. M. Swanson, “Measurement of Minority Carrier Transport Parameters in Heavily Doped n-type Silicon”, 43rd Annual Device Research Conference, Boulder, CO, June, 1985; abstract published in IEEE Transactions on Electron Device ED-32, 2555, November 1985.

RC-13. del Alamo, J. A., and R. M. Swanson, “Measurement of Heavy Doping Parameters in n-type Silicon”, 18th IEEE Photovoltaic Specialists Conference, Las Vegas, NV, October 1985, p. 584.

RJ-14. del Alamo, J. A., and R. M. Swanson, “Measurement of Hall Scattering Factor in Phosphorus-Doped Silicon”, Journal of Applied Physics 57, 2314, March 1985.

RC-11. del Alamo, J. A., S. Swirhun and R. M. Swanson, “Measuring and Modeling Minority Carrier Transport in Heavily Doped Silicon”, (Invited), International Conference on Heavy Doping and the Metal-Insulator Transition in Semiconductors, Santa Cruz, CA, July 1984; published in Solid-State Electronics 28, 47, January/February 1985.

RJ-13. del Alamo, J. A., S. Swirhun, and R. M. Swanson, “Measuring and Modeling Minority Carrier Transport in Heavily Doped Silicon”, Solid-State Electronics 28, 47, January/February 1985.

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RJ-12. del Alamo, J. A., and R. M. Swanson, “The Physics and Modeling of Heavily Doped Emitters”, IEEE Transactions on Electron Devices ED-31, 1878, December 1984. (paper)

RC-10. del Alamo, J. A., and R. M. Swanson, “Fabrication of Heavily Doped Si by PH3/SiH4 Epitaxy”, 9th International Conference on Chemical Vapor Deposition, Cincinnati, OH, May 1984, p. 295.

RC-9. del Alamo, J. A., and R. M. Swanson, “Analytical Modeling of Heavily Doped Emitters for Solar Cells”, 17th IEEE Photovoltaic Specialists Conference, Kissimmee, FL, May 1984, p. 1303.

RJ-11. del Alamo, J. A., and R. M. Swanson, “Measurement of Electron Mobility in Epitaxial Heavily Phosphorus Doped Silicon”, Journal of Applied Physics 56, 2250, October 1984. Erratum in Journal of Applied Physics 57, 2346, March 1985.

RJ-10. del Alamo, J. A., and R. M. Swanson, “Comments on ‘A Method for Determining Bandgap Narrowing in Heavily Doped Semiconductors”, IEEE Transactions on Electron Devices ED-31, 123, January 1984. (paper)

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RJ-9. del Alamo, J. A., R. M. Swanson, and A. Lietoila, “Photovoltaic Measurement of Bandgap Narrowing in Moderately Doped Si”, Solid-State Electronics 26, 483, May 1983.

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RJ-8. Cuevas, A., A. Luque, J. Eguren, and J. A. del Alamo, “50% More Output Power from an Albedo Collecting Flat Panel Using Bifacial Solar Cells”, Solar Energy 29, 419, May 1982.

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RC-8. Luque, A., A. Cuevas, J. Eguren, and J. A. del Alamo, “Concentration Analysis of an Albedo-Collecting Photovoltaic Flat Panel”, XXeme Conference Internationale de la COMPLES (Cooperation Mediterrannee pour L’Energie Solaire), Rabat, Morocco, November 1981, p. 368 (Vol. I).

RJ-7. del Alamo, J. A., “Charge Neutrality in Heavily Doped Emitters”, Applied Physics Letters 39, 435, September 1981.
(paper)

RC-7. Luque, A., A. Cuevas, J. Eguren, and J. A. del Alamo, “Over 20% Effective Efficiency Photovoltaic Flat Panel”, Solar World Forum, International Solar Energy Society Congress and Exhibition, Brighton, England, August 1981, p. 2839.

RJ-6. Cuevas, A., A. Luque, J. Eguren, and J. A. del Alamo, “High Efficiency Bifacial Back Surface Field Solar Cells”, Solar Cells 3, 337, July 1981.
(paper)

RJ-5. del Alamo, J. A., J. Van Meerbergen, F. D’Hoore, J. Nijs, “High-Low Junctions for Solar Cells Applications”, Solid-State Electronics 24, 533, June 1981.
(paper)

RC-6. Eguren, J., J. A. del Alamo, A. Cuevas, and A. Luque, “High Efficiency p+nn+ Bifacial Solar Cells”, 15th IEEE Photovoltaic Specialists Conference, Orlando, FL, May 1981, p. 1343.

RJ-4. del Alamo, J. A., J. Eguren, and A. Luque, “Operating Limits of Al-Alloyed High-Low Junctions for BSF Solar Cells”, Solid-State Electronics 24, 415, May 1981.
(paper)

RJ-3. Luque, A., A. Cuevas, J. Eguren, and J. A. del Alamo, “Celulas Solares Bifaciales de Silicio con Rendimiento Efectivo del 20%”, Mundo Electronico 106, 61, April 1981. Reprinted in Energia Solar Fotovoltaica, Jose Mompin Poblet, ed., Marcombo Boixareu Editores, 1983, pp. 103-108.

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RC-5. Eguren, J., J. A. del Alamo, and A. Luque, “An Experimental Study of Al-Alloyed pp+ Junctions for BSF Solar Cells”, 3rd European Communities Conference on Photovoltaic Solar Energy, Cannes, France, October 1980, p. 654.
(paper)

RC-4. Luque, A., J. M. Ruiz, A. Cuevas, J. Eguren, M. Acuna, G. Sala, J. M. Gomez-Agost, and J. A. del Alamo, “New concepts for the Static Concentration of Direct Diffuse Radiation”, 3rd European Communities Conference of Photovoltaic Solar Energy, Cannes, France, October 1980, p. 396.
(paper)

RJ-2. Eguren, J., J. A. del Alamo, and A. Luque, “Optimisation of p+ Doping Level of n+-p-p+ Bifacial B.S.F. Solar Cells by Ion Implantation”, Electronics Letters 16 (16), pp.633-634, 31 July 1980. (paper)

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RC-3. Luque, A., J. M. Ruiz, A. Cuevas, J. Eguren, S. Sangrador, G. Sala, J. M. Gomez-Agost, and J. A. del Alamo, “Static Concentrated Array with Double Side Illuminated Solar Cells”, 18th International Conference: Solar Energy, New Prospects, Milan, Italy, September 1979; published in Sviluppo, supplement to number 22, 421, January-March 1980 (volume 1). (paper)

RC-2. Luque, A., J. M. Ruiz, A. Cuevas, J. Eguren, S. Sangrador, G. Sala, J M. Gomez-Agost, and J. A. del Alamo, “Quasi-Static Concentrated Array with Double Side Illuminated Solar Cells”, International Solar Energy Society Silver Jubilee Congress, Atlanta, GA, May 1979, p. 1813 (volume 3). (paper)

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RJ-1. Luque, A., J. Eguren, and J. A. del Alamo, “Internal Quantum Efficiency of Back Illuminated n+pp+ Solar Cells”, Revue de Physique Appliquee 13, (12), pp. 629-632, December 1978.
(paper)

RC-1. Luque, A., J. Eguren, and J. A. del Alamo, “Internal Quantum Efficiency of Back Illuminated n+pp+ Solar Cells”, 8th European Solid State Device Research Conference, Montpellier, France, September, 1978.